2SB1030ARA Allicdata Electronics

2SB1030ARA Discrete Semiconductor Products

Allicdata Part #:

2SB1030ARATB-ND

Manufacturer Part#:

2SB1030ARA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 0.5A NS-B1
More Detail: Bipolar (BJT) Transistor PNP 50V 500mA 120MHz 300m...
DataSheet: 2SB1030ARA datasheet2SB1030ARA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
Power - Max: 300mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1
Base Part Number: 2SB1030
Description

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The 2SB1030ARA is a silicon PNP Epitaxial Planar Transistor designed for audio and general purpose amplifier applications. This transistor features good DC and AC characteristics, low collector-base capacitance and low noise. It features a structure designed for complementary circuits and can be used in general-purpose amplifier circuits.

Features

  • High Breakdown Voltage (BVCBO = 90V, BVCEO = 80V)
  • Low Collector-Base Capacitance (Cpb = 2.5pF)
  • Low Operation Current (Ic(max) = 800mA)
  • High Collector-Emitter Saturation Voltage (VCE(sat) = 0.2V)
  • Low Noise (N = 9dB)
  • Wide Temperature Range (-55℃ to +125℃)

Applications

  • Audio and general purpose amplifiers
  • AC switches
  • Small signal and driver amplifiers

Working Principle

The 2SB1030ARA is a PNP Epitaxial Planar transistor. This structure is made up of three layers. The bottom layer is the substrate layer which is made up of a silicon material. On top of the substrate, a layer of impurity is deposited and on top of that, a thin layer of semiconductor (epitaxial) material is deposited. This thin layer of material has reactive properties. The addition of impurities to the material creates regions called "doping" regions which change the properties of the material.

As current passes through the transistor, it creates an electric field which changes the conductivity of the material. An electric field is created when two regions of opposite charge exist. In the case of transistors, the electric field creates "holes" in the carriers which creates a charging current. The more current that passes through the transistor, the more holes are created, and the more charge is created. This change in charge affects the resistance of the transistor and can be used to control voltage.

The 2SB1030ARA can be used in a variety of applications, such as audio and general-purpose amplifiers, AC switches, and small-signal and driver amplifiers. This transistor has good DC and AC characteristics, low collector-base capacitance and low noise, making it an ideal choice for a range of audio applications.

The specific data is subject to PDF, and the above content is for reference

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