2SB1030ARA Discrete Semiconductor Products |
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Allicdata Part #: | 2SB1030ARATB-ND |
Manufacturer Part#: |
2SB1030ARA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 50V 0.5A NS-B1 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 500mA 120MHz 300m... |
DataSheet: | 2SB1030ARA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 30mA, 300mA |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 150mA, 10V |
Power - Max: | 300mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | NS-B1 |
Supplier Device Package: | NS-B1 |
Base Part Number: | 2SB1030 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SB1030ARA is a silicon PNP Epitaxial Planar Transistor designed for audio and general purpose amplifier applications. This transistor features good DC and AC characteristics, low collector-base capacitance and low noise. It features a structure designed for complementary circuits and can be used in general-purpose amplifier circuits.
Features
- High Breakdown Voltage (BVCBO = 90V, BVCEO = 80V)
- Low Collector-Base Capacitance (Cpb = 2.5pF)
- Low Operation Current (Ic(max) = 800mA)
- High Collector-Emitter Saturation Voltage (VCE(sat) = 0.2V)
- Low Noise (N = 9dB)
- Wide Temperature Range (-55℃ to +125℃)
Applications
- Audio and general purpose amplifiers
- AC switches
- Small signal and driver amplifiers
Working Principle
The 2SB1030ARA is a PNP Epitaxial Planar transistor. This structure is made up of three layers. The bottom layer is the substrate layer which is made up of a silicon material. On top of the substrate, a layer of impurity is deposited and on top of that, a thin layer of semiconductor (epitaxial) material is deposited. This thin layer of material has reactive properties. The addition of impurities to the material creates regions called "doping" regions which change the properties of the material.
As current passes through the transistor, it creates an electric field which changes the conductivity of the material. An electric field is created when two regions of opposite charge exist. In the case of transistors, the electric field creates "holes" in the carriers which creates a charging current. The more current that passes through the transistor, the more holes are created, and the more charge is created. This change in charge affects the resistance of the transistor and can be used to control voltage.
The 2SB1030ARA can be used in a variety of applications, such as audio and general-purpose amplifiers, AC switches, and small-signal and driver amplifiers. This transistor has good DC and AC characteristics, low collector-base capacitance and low noise, making it an ideal choice for a range of audio applications.
The specific data is subject to PDF, and the above content is for reference
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