2SB13980QA Allicdata Electronics
Allicdata Part #:

2SB13980QATB-ND

Manufacturer Part#:

2SB13980QA

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 25V 5A MT-2
More Detail: Bipolar (BJT) Transistor PNP 25V 5A 120MHz 1W Thro...
DataSheet: 2SB13980QA datasheet2SB13980QA Datasheet/PDF
Quantity: 4000
2000 +: $ 0.23457
Stock 4000Can Ship Immediately
$ 0.26
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: MT-2-A1
Base Part Number: 2SB1398
Description

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Bipolar junction transistors (BJTs) are a type of semiconductor device whose main function is to amplify and switch electronic signals and power. Bipolar junction transistors are two-terminal devices consisting of three sections: emitter, base, and collector. The 2SB13980QA is a NPN single bipolar junction transistor. This transistor is suitable for applications such as audio amplification and signal switching because of its low noise operation and moderately high gain.

The 2SB13980QA has an emitter-base junction that is built out of P-type semiconductor material and a base-collector junction that is built out of N-type semiconductor material. In order for current to pass through the transistor, there must be a sufficient amount of voltage that is applied to the base-emitter junction. This voltage causes current to pass from the emitter to the base and is called the “forward bias.” This current is then amplified at the base and passes from it to the collector. The collector voltage is reverse-biased, meaning that the voltage applied to the collector-base junction is greater than the voltage applied to the base-emitter junction.

The working principle of a bipolar-junction transistor depends upon its ability to amplify the current flowing through it. The gain of the 2SB13980QA is determined by the ratio of the collector current (Ic) to the base current (Ib). This means that an increase in the base current will result in an increase in the collector current, thus increasing the overall gain of the transistor. The gain of the transistor will also be affected by its voltage-divider biasing scheme, which controls the amount of voltage applied to the collector-base junction.

The 2SB13980QA can be used in a variety of applications because of its low noise level and moderate gain. These applications include audio amplifiers, signal switching, and laboratory equipment. The low noise operation is beneficial in audio amplifiers since a low level of noise will result in a better sound quality. It is also suitable for signal switching because of its relatively high gain and short switching times. Finally, the transistor is suitable for laboratory equipment since it can be used to control a wide variety of electrical parameters, such as output power and current.

In conclusion, the 2SB13980QA is a single bipolar junction transistor that is suitable for applications such as audio amplification, signal switching, and laboratory equipment. Its working principle relies on the forward-biasing of the base-emitter junction and the amplification of current between the collector and base. The gain of the transistor is determined by the ratio of collector current to base current, and its low noise level is beneficial in audio amplifiers. The 2SB13980QA is a versatile device that can be used for a variety of applications and should be considered for any electronic project.

The specific data is subject to PDF, and the above content is for reference

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