2SB1215S-H

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 500mA, 5V
Power - Max:	1W
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP
Base Part Number:	2SB1215

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2SB1215S-H Application Field and Working Principle of Single Bipolar Transistors (BJT)

Bipolar junction transistors (BJTs) are commonly used semiconductor devices. A single BJT consists of three electrodes that enable the active control of electric current. Among the various types of BJTs, the 2SB1215S-H type is primarily used in motor drives and switching applications. This article explains their application field and working principle.

Application Field of 2SB1215S-H

2SB1215S-H transistors are specifically designed and manufactured to meet the requirements of high-power motor drives and switching applications. They can be used to control motors with up to 15 A of current, which makes them suitable for operation in high-power, high-speed equipment. They can also be used as switching transistors for very high-speed, low-power applications.

Working Principle of 2SB1215S-H

2SB1215S-H transistors work on the principle of a three-terminal current-controlled switch. They are usually configured in either an NPN (negative-positive-negative) or a PNP (positive-negative-positive) arrangement, depending on the application.In an NPN configuration, the biasing of the base-emitter junction controls the collector-emitter current. When a small current is applied to the base terminal, current through the collector-emitter terminals begins to flow, and the transistor is said to be “saturated”. When the base current is removed, the transistor reverts to its original, non-conducting state. The amount of current flow through the collector-emitter terminals can be controlled by varying the base current. In a PNP configuration, the biasing of the base-emitter junction controls the collector-emitter current. When a small voltage is applied to the base terminal, current through the collector-emitter terminals begins to flow, and the transistor is said to be “saturated”. When the base voltage is removed, the transistor reverts to its original, non-conducting state. The amount of current flow through the collector-emitter terminals can be controlled by varying the base voltage.

Conclusion

2SB1215S-H transistors are a type of bipolar junction transistor specifically designed for high-power motor drives and switching applications. They can control up to 15 A of current and can switch at very high speeds. The working principle of the 2SB1215S-H relies on the biasing of the base-emitter junction which controls the collector-emitter current. Depending on the application, they can be configured as either a NPN or PNP transistor, which controls the amount of current flow through the collector-emitter terminals.

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