Allicdata Part #: | 2SB1236TV2Q-ND |
Manufacturer Part#: |
2SB1236TV2Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 120V 1.5A ATV |
More Detail: | Bipolar (BJT) Transistor PNP 120V 1.5A 50MHz 1W Th... |
DataSheet: | 2SB1236TV2Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 100mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 3-SIP |
Supplier Device Package: | ATV |
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The 2SB1236TV2Q is a high quality NPN bipolar junction transistor (BJT). It is mainly used in linear, switching, and amplifier circuits. It is one of the most popular BJTs out there and is used in a wide range of applications. It is designed to operate with a wide range of input and output voltages, making it suitable for a variety of projects.
The 2SB1236TV2Q has a voltage gain, also known as DC current gain, of 800. This means that if the input voltage is 1V, the output voltage is a maximum of 800V. The maximum frequency of the transistor is up to 5.5GHz. The power dissipation of the 2SB1236TV2Q is 2W, and it has a collector-base breakdown voltage of 80V. It also has a collector-base reverse breakdown voltage of 40V, and a collector-emitter voltage of 80V.
The 2SB1236TV2Q is a general-purpose transistor used in a wide variety of applications. Some of the most common uses include switching circuits, audio amplifiers, voltage regulators, motor controllers, and boost converters. It can also be used to build simple logic circuits and as an amplifier for both high and low power audio signals. As the 2SB1236TV2Q is designed to work with a wide range of input and output voltages, it can be used in many projects. The voltage gain of the transistor also allows it to be used as an amplifier with a wide range of audio signals, making it suitable for audio amplifiers.
The working principle of a NPN BJT is based on the concept of a "p-n junction." This refers to the physical boundary between two different types of semiconductors (positive and negative) in a transistor. When a current is applied to the base (the control terminal), it creates a voltage across the base-collector junction. This interacts with the positively-charged holes in the base, which in turn pushes electrons from the collector into the base. This creates a current that flows from the collector to the emitter, resulting in an amplified output current.
The 2SB1236TV2Q is also highly reliable compared to other BJTs. This is due to its high-quality construction and its ability to handle a wide range of input and output voltages. The high frequency capabilities of the 2SB1236TV2Q make it suitable for a wide range of applications, including linear, switching, and amplifier circuits. The 2SB1236TV2Q is also highly reliable and can handle high power applications. This makes it suitable for projects such as boost converters and motor controllers.
In conclusion, the 2SB1236TV2Q is a reliable and high-quality NPN bipolar junction transistor that is suitable for a wide range of applications. It has a voltage gain of 800, a maximum frequency of 5.5GHz, and a power dissipation of 2W. It is also highly reliable and can handle high power applications. The working principle of the 2SB1236TV2Q is based on the concept of a "p-n junction," which creates an amplified output current when a current is applied to the base.
The specific data is subject to PDF, and the above content is for reference
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