Allicdata Part #: | 2SB1457(TE6FM)-ND |
Manufacturer Part#: |
2SB1457(TE6,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PNP 2A 100V TO226-3 |
More Detail: | Bipolar (BJT) Transistor PNP 100V 2A 50MHz 900mW T... |
DataSheet: | 2SB1457(TE6,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1A, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SB1457(TE6,F,M) transistor is a 1-chip PNP bipolar junction transistor (BJT) developed for use mainly in industrial analog, audio and general-purpose circuit applications such as diode-connected amplifiers and voltage regulators. Since this is a single transistor, the main application for this device is for signal amplification or signal processing, or in a larger circuit to control a higher voltage circuit.
A transistor is an electronic device composed of three layers of semiconductor material and operates as an amplifier, switch and regulator. The 2SB1457(TE6,F,M) transistor is no exception; it is composed of a base layer (the middle layer), a collector layer and an emitter layer. It is designed to act as a switch and amplifier, depending on the type of current and voltage applied to it.
When no current is applied to the transistor, it remains “off” or in the cutoff mode. When a small current is applied at the base layer, it opens its tiny gate (base–emitter junction) allowing the much larger current to pass through the collector–emitter region, thus turning the transistor “on”. This application of small current to the base layer is called Bias, which is a term used to describe how much current is applied to the base. If the amount of bias applied is too small or too high, the transistor may be unstable and cannot function properly.
The 2SB1457(TE6,F,M) transistor also has a maximum collector current rating, which needs to be considered when developing a circuit. The collector current is set by the Base–Emitter voltage (Vbe), so the designer needs to choose a good sized resistor to properly control the Base–Emitter voltage and the collector current. If the current is too high, it might damage or overheat the device, and if it is too low, the transistor may be unstable and may not meet the circuit’s requirements.
The 2SB1457(TE6,F,M) transistor is an excellent choice for applications requiring an efficient and reliable bipolar single device such as diode connected amplifiers, voltage regulators, motor controls and audio circuits. The maximum collector current of 20mA is more than enough for most of the standard applications and makes this a very versatile device. Another great benefit is its low power dissipation, making it an ideal choice for electronics with limited heat dissipation.
The 2SB1457(TE6,F,M) transistor is a very versatile device with a wide range of applications in both industrial and consumer electronics circuits. Its operating bias circuits make it ideal for applications like motor control and voltage regulator circuits, and the low power dissipation makes it a perfect device for pulse circuit applications. This single transistor is a great choice for applications that require efficient, reliable and low cost amplification and controlling of various low voltage signals.
The specific data is subject to PDF, and the above content is for reference
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