2SB1239TV2

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2SB1239TV2 single bipolar transistors (BJT) are semiconductor devices with three terminals intended for amplifying or switching applications.

It is an NPN type bipolar transistor with a maximum of Collector-Emitter voltage of 12V and Collector-Base voltage of 12V. This transistor has a maximum power dissipation of 600mw and a minimum current gain of 70. It has a maximum operating temperature of 175 degree Celsius.

This device can be used in numerous applications, such as, but not limited to, a general audio amplifier, high frequency amplifier, audio pre-amplifiers, power amplifier, switching circuits, voltage regulator, line switch and various other electronics applications.

2SB1239TV2 high-frequency Bipolar transistors work on the principle of controlling the current between the emitter and the collector by the base-current. Its function is to control and amplify signals which can be either voltage or current by isolating and regulating the input signal flow. When the base current flows, it attracts electrons from the emitter which then travel through the base and passes from the collector through the collector electrode into the collector region. This is known as the Doping effect which results in amplification of the input signal.

These transistors use an Internal Base Resistor which helps to minimize noise by dissipating the internal generated heat. In addition, collector-base capacitance helps to eliminate any unwanted noise from radiating off the device and helps to filter out any low-frequency signals until the base current reaches the required level for conducting the device. They also have a low input capacitance which removes any high frequency interference such as static electricity.

To use 2SB1239TV2 single bipolar transistor, it is important to properly install the device and to ensure that the base-collector connection is connected securely. It is important to also connect the collector-emitter and emitter-base leads together carefully and to ensure they are not touching other metal parts. The maximum voltage at the collector-emitter and collector-base should not exceed 12V or the device may be damaged. The maximum ambient temperature should also not exceed 175-degree Celsius or else the device may be damaged.

As transistors are semi-conductive devices, it is important to keep the device away from any kind of moisture. It is also important to make sure the device is stored in dry and clean area as any amount of moisture makes the insulation of the transistor weaker.

2SB1239TV2 single bipolar transistor is useful for a wide range of applications from amplifiers to switching circuits to voltage regulators. It is an inexpensive device and is available in SC-70 surface-mount version too. The device is designed for low-frequency application and is used for enhancing the gain or to control the direction of current. It works on the principle of controlling the current between the emitter and the collector by the base-current and is important to ensure the base-collector connection is connected securely to get the best performance out of the device.

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