2SB15990QL Allicdata Electronics

2SB15990QL Discrete Semiconductor Products

Allicdata Part #:

2SB15990QLTR-ND

Manufacturer Part#:

2SB15990QL

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 40V 1.5A MINI PWR
More Detail: Bipolar (BJT) Transistor PNP 40V 1.5A 150MHz 1W Su...
DataSheet: 2SB15990QL datasheet2SB15990QL Datasheet/PDF
Quantity: 2000
1000 +: $ 0.17397
2000 +: $ 0.15766
Stock 2000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F1
Base Part Number: 2SB1599
Description

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The 2SB1590QL is a high power silicon NPN transistor that is primarily intended for audio and high power amplifier applications operating at frequencies of up to 300 MHz. It is designed with an integrated C-E antilog control circuit that allows for a high degree of linearity and distortion-free operation. The device is available in an SOIC-421 package. The collector is electrically connected to the base as part of the active region configuration, thus providing a high degree of control over current and voltage.

The 2SB1590QL has superior hFE linearity and reduction of thermal runaway. In addition, thermal compensation is also provided by the controlling NPN transistor. This helps to control the voltage and current gain stability, reduce the effect of temperature variations, and minimise thermal runaway. It also provides excellent thermal dissipation capability.

The 2SB1590QL offers a wide range of applications. It can be used in power amplifiers, audio amplifiers, broadcast television, base stations, and many professional audio systems. It is also suited for use in industrial and instrumentation equipment, high-speed switching applications, and high voltage power supplies.

The 2SB1590QL operates on a single-ended current source design of input stage construction, where a single current source is used to supply the base drive current for both NPN and PNP transistors. This allows for improved impedance matching, faster switching speeds, and accurate voltage control. Furthermore, the device has a reduced power dissipation due to the low collector-emitter leakage current.

The 2SB1590QL is built with a unique C-E antilog control circuit that maintains constant current over the transition range of the input signal. This allows for improved linearity and further reduces distortion effects. This design also eliminates secondary distortion effects, such as jitter and overshoot.

In addition, the 2SB1590QL is equipped with a built-in thermal protection device that monitors the temperature of the device, and will turn off the transistor if the device temperature becomes too high. This helps to prevent damage to the device due to overheating. Finally, the 2SB1590QL is designed with high current and voltage capability, making it suitable for a wide range of amplifiers and power supplies.

Overall, the 2SB1590QL is a high power silicon NPN transistor designed for audio and high power amplifier applications operating at frequencies of up to 300 MHz. It offers superior hFE linearity, reduction of thermal runaway, excellent thermal dissipation, improved impedance matching, and high current and voltage capability. The 2SB1590QL is available in an SOIC-421 package, and is suitable for many professional and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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