2SB1259 Allicdata Electronics
Allicdata Part #:

2SB1259-ND

Manufacturer Part#:

2SB1259

Price: $ 1.33
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS PNP DARL 120V 10A TO220F
More Detail: Bipolar (BJT) Transistor PNP - Darlington 120V 10A...
DataSheet: 2SB1259 datasheet2SB1259 Datasheet/PDF
Quantity: 3483
1 +: $ 1.20960
10 +: $ 1.09305
25 +: $ 0.97574
100 +: $ 0.87816
250 +: $ 0.78057
500 +: $ 0.68300
1000 +: $ 0.56592
2500 +: $ 0.52688
5000 +: $ 0.52038
Stock 3483Can Ship Immediately
$ 1.33
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 4V
Power - Max: 30W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Description

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The 2SB1259 transistor is classified as a bipolar junction transistor, or BJT. It belongs to a family of transistors that are broadly categorized as single transistors. This device has some very special characteristics that make it suitable for specific applications. In this article, we\'ll look at the 2BS1259 application field and its working principle.

2SB1259 is a PNP bipolar junction transistor that features a high breakdown voltage and a low saturation voltage. It has an acceptable voltage gain for a variety of circuit applications. It is typically used in amplifier and switching circuits, as well as in circuits that require high currents, such as in motor drives. It is also used in applications that require high-efficiency switching, such as electrical switching. The device is also suitable for use in temperature-sensitive circuits, due to its low thermal resistance.

The working principle of a transistor is based on the movement of electrons and holes. A PNP transistor has two emitter-collector junctions. The collector is made with a relatively lower doping concentration than the emitter layer. This gives it more electrons, thus creating a PN junction. By applying a current to the base, electrons from the collector are attracted to the base. As a result, current is drawn from the collector, through the base and the emitter. This creates a current flow in the circuit that is amplified by the transistor.

The 2SB1259 transistor is widely used in automotive and industrial electronics. It features a high voltage and current rating, making it suitable for applications in automotive relay controllers, as well as applications that require high power. It is also used in many analog and switching circuits, due to its wide range of linear and switching characteristics.

The 2SB1259 transistor is the ideal choice for many different circuits and can provide a great deal more performance than other transistors. It is used in many electronic devices and systems, making it one of the most important components of modern electronics. This article has given an overview of the 2SB1259 application field and its working principle.

The specific data is subject to PDF, and the above content is for reference

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