Allicdata Part #: | 2SB1308T100Q-ND |
Manufacturer Part#: |
2SB1308T100Q |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 20V 3A SOT-89 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 3A 120MHz 2W Surf... |
DataSheet: | 2SB1308T100Q Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.18522 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 150mA, 1.5A |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Base Part Number: | 2SB1308 |
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Transistors are one of the most versatile components used in electronics and offer a number of advantages. The 2SB1308T100Q from Toshiba is a Single Bipolar Junction Transistor (BJT) and is popular due to its ability to switch large currents, its relatively low voltage drop, and low reverse leakage current.
In essence, the 2SB1308T100Q is a three-terminal device composed of two distinct parts: a P-type semiconductive material layer, which is the base, and an N-type semiconductive material layer, which is the emitter. The base and emitter both have an area of contact between them, and a wire separates them, forming the collector.
The transistors are usually used as switching devices and can be used to control the flow of current. When a small current is applied to the base terminal, the base-emitter junction is forward biased and a larger current flows from the collector to the emitter. When the base current is removed, the transistor switches off and the current stops.
The 2SB1308T100Q is more widely used in small signal devices due to its high current transferring ratio and its low collecting-emitter saturation voltage. The device also offers high gain, low power loss, and high frequency response.
The 2SB1308T100Q is typically used in a variety of different applications, such as audio amplifiers, switching circuits, and high frequency amplifiers. The device can also be used for voltage regulation, voltage conversion, and voltage limiting.
Because of its low voltage drop capability, the 2SB1308T100Q is an ideal choice for use in low voltage applications. This makes it an ideal choice for use in battery-powered applications, where the voltages are usually lower than 6V.
The 2SB1308T100Q also offers superior low-noise performance and is highly reliable. This makes it an ideal choice for use in consumer electronics, such as cell phones, digital cameras, and MP3 players.
Overall, the 2SB1308T100Q is an ideal choice for use in a variety of different applications. Its high current handling capability, low voltage drop, and superior low-noise performance make it an ideal choice for use in consumer electronics. Its ability to switch large currents and low reverse leakage current make it an ideal choice for use in small signal devices. Its reliability and long lifetime make it an ideal choice for use in battery-powered applications.
The specific data is subject to PDF, and the above content is for reference
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