2SC39390RA Allicdata Electronics
Allicdata Part #:

2SC39390RATB-ND

Manufacturer Part#:

2SC39390RA

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 80V 0.5A TO-92NL
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 120MHz 1W T...
DataSheet: 2SC39390RA datasheet2SC39390RA Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13609
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92NL-A1
Base Part Number: 2SC3939
Description

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2SC39390RA is an NPN epitaxial type silicon transistor designed to meet audio and general purpose amplifier applications. This device is composed of a multi-layered epitaxial planar structure which is formed on a substrate of high (2.0-2.2) resistivity silicon material. The main features of this device include a good frequency characteristics, high gain and excellent switching characteristics.

Application Field

Due to its excellent operating characteristics and planar structure, 2SC39390RA is a suitable choice for applications such as general purpose amplifiers, audio amplifiers, pre amplifiers, driver circuits and radio receivers. Also, it can be used in high speed switching, operational amplifiers and low noise amplifiers in the consumer electronics and communications industry.

Operating Principles

A 2SC39390RA is essentially an NPN transistor, meaning that it consists of three layers – a base, a collector and an emitter. When current flows through the base-emitter junction, a large current is produced between the collector and emitter, which produces a gain or amplification of the input signal.

The base current controls the collector current, which is determined by the size of the collector-base junction capacitance. The base-emitter voltage also affects the collector current, as a large voltage will allow more electrons to flow from the base to the collector.

Generally, the larger the collector-base junction capacitance, the lower the gain of the 2SC39390RA. On the other hand, a higher base-emitter voltage can increase the gain of the transistor.

The base region of this transistor is connected to the collector circuit, which is composed of a resistor and a capacitor. This resistor-capacitor combination determines the gain of the 2SC39390RA. The resistor limits the amount of current that can flow through the collector-base junction, while the capacitor stores any extra current until it reaches a certain threshold.

In addition, the 2SC39390RA is also equipped with an emitter resistor, which controls the current flowing through the base-emitter junction. This can be used to reduce the gain of the transistor, as the current flowing through the junction will be limited by the size of the emitter resistor.

Furthermore, the 2SC39390RA is also equipped with a base resistor, which is used to reduce the current flowing through the base-collector junction. This can be used to reduce the gain of the transistor and prevent overloading of the base region.

In summary, the 2SC39390RA is an NPN transistor with excellent operating characteristics. The base, collector and emitter of this transistor all have various resistors and capacitors connected, which all serve to control the current flowing through the various junctions, and ultimately the gain of the transistor.

The specific data is subject to PDF, and the above content is for reference

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