2SC4227-T1-R34-A Allicdata Electronics
Allicdata Part #:

2SC4227-T1-R34-A-ND

Manufacturer Part#:

2SC4227-T1-R34-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: SAME AS NE68130 NPN SILICON AMPL
More Detail: RF Transistor NPN 10V 65mA 7GHz 150mW Surface Moun...
DataSheet: 2SC4227-T1-R34-A datasheet2SC4227-T1-R34-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The 2SC4227-T1-R34-A is a perfect example of a transistor belonging to the family of transistors referred to as "bipolar junction transistors (BJTs), specifically classified under radio frequency (RF) BJTs. These transistors make use of the movement of electric carriers within a solid-state material, significant in the field of electronics. This article will analyze what the application field and the working principle of these transistors are.

The 2SC4227-T1-R34-A is primarily used as an amplifier, more accurately as an amplifier Stage-1. Its application field is limited due to its low current, but its relatively high output current and higher bandwidth is advantageous in communications and mixed signal applications. Its applications can even extend to networking, industrial, domestic and computer infrastructures. Furthermore, the energetic characteristics of this transistor make it ideal for the amplification of signals up to a certain frequency, which can vary from 25MHz to 1000MHz depending on the model used.

The working principle of the 2SC4227-T1-R34-A can be better understood with the help of a simple example. Let\'s consider an amplifier where the input signal is an electrical current, which is then converted into an amplified voltage via the transistor. To begin with, the transistor contains three different kinds of regions: a base, a collector and an emitter region. Now let\'s assume a voltage is applied to the base region, when this happens the transistor is activated and allows a current to flow from the collector region to the emitter region, thus resulting in an amplification of the initial signal.

The way that the 2SC4227-T1-R34-A works is by utilizing the intrinsic behavior of semiconductor materials. A semiconductor is a solid-state material with a high electrical resistance, but with a relatively low doping. When a voltage is applied to the base region, it will produce an electrical field which affects the majority carriers in the semiconductor, these are known as holes and electrons. The electrical field produced by the applied voltage will repel the majority carriers in the base region, thus creating an imbalance in the flow of these carriers. This in turn will cause the current to flow from the collector to the emitter, resulting in the amplification of the input signal.

In summary, the 2SC4227-T1-R34-A is a transistor that belongs to the family of RF BJTs. It offers a low current, but a relatively high output current, making it suitable for a variety of applications, including networking and domestic infrastructures. The working principle behind this transistor is that a voltage applied to the base region creates an electrical field, which affects the majority carriers in the semiconductor material, resulting in a current flow from the collector to the emitter and hence, the amplification of the initial signal.

The specific data is subject to PDF, and the above content is for reference

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