2SC4672T100Q Allicdata Electronics
Allicdata Part #:

2SC4672T100QTR-ND

Manufacturer Part#:

2SC4672T100Q

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 50V 2A SOT-89
More Detail: Bipolar (BJT) Transistor NPN 50V 2A 210MHz 500mW S...
DataSheet: 2SC4672T100Q datasheet2SC4672T100Q Datasheet/PDF
Quantity: 7000
1 +: $ 0.20000
10 +: $ 0.19400
100 +: $ 0.19000
1000 +: $ 0.18600
10000 +: $ 0.18000
Stock 7000Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 500mW
Frequency - Transition: 210MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Base Part Number: 2SC4672
Description

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The 2SC4672T100Q is a semiconductor device produced by StMicroelectronics, and is classified as a Bipolar Junction Transistor (BJT) which is the most commonly used semiconductor device amongst its peers. It consists of three layers of semiconductor material which are connected by electrical contacts. The transistor is mainly used in radio and audio amplifiers, linear and switching power supplies, timers, and logic applications.

The 2SC4672T100Q has an SOT223-3L package with an NPN type of polarity, meaning it has an N-type semiconductor layer sandwiched between two layers of P-type semiconductor. This device has application specific current-gain characteristics and is generally used in the frequency range between 10MHz and 200MHz. The power dissipation of the device is limited to 350mW.

The working principle of the 2SC4672T100Q can be easily explained using the two electrodes located on the transistor. The emitter electrode is usually connected to the N layer in the transistor. This is the electrode into which current is injected. The collector electrode is usually connected to the P layer, located in between the N layer and the emitter. This is the electrode from which current is removed. The base electrode is located between the emitter and the collector. It acts like a gate and when a certain amount of current is allowed to pass through it, a certain current is allowed to flow through the transistor.

Scaling up the components on the transistor can greatly affect its behaviour, and customizing the size of the components can also make it much more efficient for its intended application. Lucky for the user, this device can be easily customized in order to increase its power output, or reduce its switching time depending on the needs of the user.

The 2SC4672T100Q is a very useful transistor, as it has a wide range of applications, from amplifiers, power supplies, and logic applications, to name a few. It’s also highly customizable, so the user can tailor it according to their specific needs. Its working principle is also quite simple, making the device an ideal choice for engineers when it comes to designing circuits.

The specific data is subject to PDF, and the above content is for reference

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