2SC4618TLP Discrete Semiconductor Products |
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Allicdata Part #: | 2SC4618TLPTR-ND |
Manufacturer Part#: |
2SC4618TLP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS RF NPN 25V 50MA SOT-416 |
More Detail: | RF Transistor NPN 25V 50mA 300MHz 150mW Surface Mo... |
DataSheet: | 2SC4618TLP Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 300MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 1mA, 6V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Base Part Number: | 2SC4618 |
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The 2SC4618TLP is a NPN, epitaxial silicon transistor developed specifically for intended for use in high-frequency applications. The 2SC4618TLP provides a wide range of capabilities for high-frequency applications as well as providing good high-frequency/power performance in a small package.
Applications of the 2SC4618TLP include RF power amplifiers, high-frequency oscillators, RF receivers, and amplifiers in the 200MHz-1.2GHz frequency range.
The working principle of the 2SC4618TLP is based on that of other NPN transistors, wherein the transistor consists of three terminals – the emitter, base, and collector. A small current flowing through the base terminal controls a large current between the emitter and collector, thus making the transistor function as an amplifier.
The 2SC4618TLP is designed to have a high current gain even at high frequencies, and its maximum gain-bandwidth product is 8GHz. Additionally, this transistor is designed to have low noise levels and low distortion performance. The transistor has a high input power rating and can handle up to 40V collector-emitter voltages.
The gain of the 2SC4618TLP can be controlled by varying the base-emitter voltage (Vbe) and reversing the biasing conditions. The gain of the transistor can also be affected by the biasing of the base-emitter junction, as well as the ambient temperature. The gain of the transistor can also be affected by the collector current, as increasing it decreases the gain of the transistor.
The 2SC4618TLP can be used in a wide range of high-frequency applications and offers excellent performance even at high frequencies. It provides excellent high-frequency/power performance in a small package, and is designed to have a low noise and distortion performance. The transistor is also designed to have a high current gain even at high frequencies and has a high input power rating.
In conclusion, the 2SC4618TLP is a versatile transistor designed specifically for high-frequency applications. It provides excellent high-frequency/power performance in a small package, and has a high current gain even at high frequencies. The gain of the transistor can be controlled by varying the biasing of the base-emitter junction, and the transistor\'s maximum gain-bandwidth product is 8GHz. Additionally, the transistor has a high input power rating and can handle up to 40V collector-emitter voltages.
The specific data is subject to PDF, and the above content is for reference
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