2SC4215-Y(TE85L,F)

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The 2SC4215-Y (TE85L, F) is a transistor that falls under the category of transistors – bipolar (BJT) – RF. It is an epitaxial planar type transistor developed for use in RF power amplifying and oscillating circuits. This device uses silicon epitaxial planar type transistors. This transistor is designed to meet the demands of high frequency, high gain, and high output power.

The 2SC4215-Y has a low gain cut-off frequency and a current amplification factor of approximately 25. Its base-collector voltage has a minimum of 3 volts, while its collector-base voltage has a minimum of 6 volts. The maximum collector current of this transistor is 3 amps and its power dissipation is 350 mW. The maximum collector-emitter voltage is 6 volts and the maximum collector-base voltage is 8 volts.

The 2SC4215-Y is suitable for use in RF power amplifying and oscillating circuits. It performs well as a power amplifier in radio systems, such as medium wave, FM broadcast, and UHF television systems. The transistor also performs well as an oscillator in ultra high frequency (UHF) communication systems. Additionally, the 2SC4215-Y provides excellent linearity and has a wide dynamic range, making it suitable for use in digital systems.

The working principle of the 2SC4215-Y is based upon semiconductor physics. When the transistor is properly biased, a section of semiconductor material between the base and collector will act as a semiconductor diode. This diode – called an emitter base junction – has holes and electrons that move in opposite directions. When the device\'s emitter is made positive, current will flow through the emitter-base junction.

When current flows through this junction, the electrons and holes will recombine in the base region. This creates a negative voltage at the base, which causes more current to flow through the emitter-base junction, creating a larger voltage drop in the base-collector circuit. This is called amplification. In other words, small changes in the base current result in larger changes in the collector current.

The amplification factor of the 2SC4215-Y is determined by the transistor\'s geometry – including the size and shape of the emitter, base, and collector. The 2SC4215-Y has an amplification factor of about 25, meaning it can amplify an input current of up to 25 times. This makes it an ideal device for use in high-power RF applications.

The 2SC4215-Y is a small, yet rugged transistor developed for use in RF applications. It features excellent linearity and a wide dynamic range, making it suited for a wide variety of applications. Its low gain cut-off frequency and current amplification factor make it a great choice for use in high-power RF amplifiers and oscillators.

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