2SC4081U3T106Q

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	200mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	UMT3

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Transistors - Bipolar (BJT) - Single

The 2SC4081U3T106Q is a field-effect transistor (FET), which is a type of transistor used for switching and amplifying electronic signals. It is manufactured by Toshiba as part of its 2SC family of discrete components. This device is a single N-channel FET, meaning that it has a single source and drain and is designed to control current flow through a single channel.The 2SC4081U3T106Q is a P-channel device, which means that the channel of the device is created by applying a negative voltage to the gate. This allows current to flow from the source to the drain. This FET operates in the depletion mode, which means that the channel is closed when the gate voltage is at its most positive level. That is, current will not flow until a negative gate voltage is applied. This device offers both good noise immunity and fast switching speeds, making it ideal for use in low-noise, high-speed circuit applications.The 2SC4081U3T106Q has a variety of uses in different applications. It is commonly used as a switch in circuit boards and other electronic devices, such as microcontrollers, as well as for amplifying radio signals. In addition, it can be used for frequency converting, logic interfacing and signal conditioning applications.In terms of its working principle, the FET operates on a number of physical phenomena. It typically consists of two terminals: the gate and the drain. When a positive gate voltage is applied, it induces a negative charge at the gate-drain junction, creating an electric field. This electric field causes the electrons to move from the source to the drain, allowing current to flow.The process can be reversed by applying a negative gate voltage. This causes the electrons to move back to the source, closing the channel and halting the flow of current. This process can be repeated rapidly, allowing the FET to act as a switch and make it ideal for high-speed applications.The 2SC4081U3T106Q is a versatile device that is well suited for a wide range of applications. With its fast switching speed and excellent noise immunity, it can be used in a variety of electronic devices and circuits. It can be used for both power switching and signal amplifying applications, making it a reliable and convenient choice for many projects.

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