2SC4482U-AN

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The 2SC4482U-AN is a type of bipolar junction transistor (BJT). It is a single-piece device, meaning it consists only of one transistor. They are used in many electronic applications and are available in a variety of types, shapes and sizes. The 2SC4482U-AN has specific features and features, which help to make it particularly well suited to certain applications.

The 2SC4482U-AN is a NPN silicon transistor with a 2.7V minimum voltage rating and a maximum voltage rating of 40V. It can handle up to 800mA of collector current and has a power dissipation of 1.4W. It has a maximum gain (hFE) of 50-200 and an operating temperature of -65°C to +150°C. The device is set up as an epitaxial NPN transistor with a maximum junction temperature of +150°C. The collector-base voltage (Vcbo) of the 2SC4482U-AN is 40V, with a collector-emitter voltage (Vceo) of 30V, and an emitter-base voltage (Vebo) of 5V. It has a current gain (hfe) of 50-200, which allows it to switch at high speeds and can be used up to 200MHz.

The 2SC4482U-AN operates on the basis of heterojunction bipolar transistors. This means that they are composed of two different semiconductor materials, usually in the form of two thin semiconductor layers. The N-type layer is formed on top of the P-type layer, with a depletion region formed between them. Heterojunction bipolar transistors are capable of much higher current gain and frequency than conventional bipolar transistors, at the expense of a higher price tag.

In terms of application fields, the 2SC4482U-AN can be used to amplify audio and radio-frequency (RF) signals. It is often used in audio amplifiers, FM radio transmitters and other low-power circuits. It can also be used in switching power supplies, to drive motors and in power converters.

With respect to its working principle, the 2SC4482U-AN transistor works by allowing current to flow from the emitter to the collector when base voltage is applied. This creates a weak current at the base terminal. The current from the collector to the emitter is controlled by the current at the base since the number of carriers that can cross the depletion region between the collector and the emitter is proportional to the current at the base. This differs from conventional bipolar transistors, which work on the principle of minority carriers passing through the base.

In summary, the 2SC4482U-AN is a type of bipolar junction transistor (BJT) which is available in a single-piece package. It is a NPN silicon transistor and has a range of specific features, which makes it well suited to certain applications, including audio and radio-frequency amplifiers, switching power supplies and motors. It works on the heterojunction principle and consists of two thin semiconductor layers.

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