2SC4726TLN Allicdata Electronics
Allicdata Part #:

2SC4726TLNTR-ND

Manufacturer Part#:

2SC4726TLN

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 11V 0.05A SOT-416
More Detail: Bipolar (BJT) Transistor NPN 11V 50mA 3.2GHz 150mW...
DataSheet: 2SC4726TLN datasheet2SC4726TLN Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06713
6000 +: $ 0.06306
15000 +: $ 0.05899
30000 +: $ 0.05424
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 11V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Power - Max: 150mW
Frequency - Transition: 3.2GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
Base Part Number: 2SC4726
Description

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The 2SC4726TLN is a NPN Darlington bipolar junction transistor designed for use as switching elements in a wide range of applications. It is manufactured by the Toshiba Corporation and is available in a surface-mount package for easy integration into modern designs. The 2SC4726TLN is suitable for a variety of digital and analog circuits, particularly those requiring high-power input and output switching. This high-power switching is enabled by the transistor\'s robust Darlington configuration, which consists of two transistors connected in series and using a common base-emitter junction. This arrangement combines the current gain of both transistors to increase the overall current gain, allowing the 2SC4726TLN to switch larger current loads than a single transistor. This makes it especially suitable for use in high-power applications, such as high-current switching, power amplifier design, and high-power logic circuits.

The 2SC4726TLN is rated for operation over a wide voltage range and at high power levels, making it an optimal choice for many types of circuit designs. To ensure efficient operation and maximum performance, the transistor is designed with an integrated heat-dissipation mechanism. This mechanism consists of a metal plate or plate-like structure between the collector and base junction of the transistor. This plate-like structure helps to spread the heat generated by the transistor and prevents any potential overheating from occurring. The 2SC4726TLN also features a low collector-emitter saturation voltage (VCEs) which allows it to switch larger loads quickly and accurately. The transistor is also designed with a low output impedance, allowing it to drive large loads with minimal power dissipation.

The 2SC4726TLN is designed for use as a Surface Mount Device (SMD). This means that the transistor can be easily integrated into modern circuits without the need for a specialized mounting procedure. The SMD package also reduces the size of the circuit board and makes it more compact than many other transistors. Additionally, the 2SC4726TLN has a highly robust design that is capable of withstanding extreme temperatures and other environmental conditions. This makes it an ideal choice for use in both indoor and outdoor applications.

The 2SC4726TLN offers numerous advantages over traditional single-transistor designs. Its high current gain and low VCEs enables it to switch larger currents quickly and accurately. The integrated heat distribution plates ensure that the transistor does not overheat or become damaged by excessive power levels. Furthermore, the 2SC4726TLN\'s SMD package allows for compact designs that utilize fewer components and minimize board space. Overall, the 2SC4726TLN is a great choice for any design that requires a powerful and accurate high-power switching transistor.

The specific data is subject to PDF, and the above content is for reference

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