Allicdata Part #: | 2SC4081U3T106STR-ND |
Manufacturer Part#: |
2SC4081U3T106S |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | GENERAL PURPOSE SMALL SIGNAL AMP |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200m... |
DataSheet: | 2SC4081U3T106S Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.02362 |
6000 +: | $ 0.02130 |
15000 +: | $ 0.01852 |
30000 +: | $ 0.01667 |
75000 +: | $ 0.01482 |
150000 +: | $ 0.01235 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
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Bipolar junction transistors (BJT) are a type of semiconductor device, and the Single type is a general-purpose transistor that is typically made from a combination of two types of either NPN or PNP. The 2SC4081U3T106S is an example of a Single BJT that is made from an NPN combination. It is a common device used in a wide range of consumer and industrial products. In this article, we will discuss the application field and working principle of the 2SC4081U3T106S.
Application Field
The 2SC4081U3T106S is a small signal NPN transistor designed for general purpose use. It is a versatile device, suitable for a wide variety of applications. It is typically used in switching and amplification circuits, such as amplifiers, detectors, oscillators and filters. It is also used in pulse and voltage shaping circuits, such as switching power supplies and pulse width modulation (PWM) circuits. Furthermore, it is used in linear applications, such as voltage followers, voltage regulators and current limiters.
Working Principle
The working principle of the 2SC4081U3T106S is based on the properties of the base-emitter junction. When a small base current is applied, electrons are injected into the base region of the transistor. These electrons are then attracted to the emitter region, which in turn allows the collector current to flow. This current then flows through the collector and flows out of the device. The base current controls the amount of current that flows through the collector and emitter by controlling the amount of electrons that are injected into the base region. In other words, the base current controls the amount of current that is able to pass through the transistor.
In addition to controlling the amount of current flowing through the transistor, the base current also affects the collector-emitter voltage. This is due to the interaction between the two components. When the base current increases, the voltage between the collector and emitter decreases. Conversely, when the base current decreases, the voltage between the collector and emitter increases. This voltage-current relationship is known as the transistor’s “gain”.
The 2SC4081U3T106S is a versatile small signal transistor, suitable for a wide variety of applications. It is used in switching and amplification circuits, linear applications, and also in pulse and voltage shaping circuits. Its working principle is based on the properties of the base-emitter junction, and the base current that is applied to the transistor affects the amount of current that is able to flow through the transistor, as well as the collector-emitter voltage.
The specific data is subject to PDF, and the above content is for reference
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