Allicdata Part #: | 2SC4731T-AY-ND |
Manufacturer Part#: |
2SC4731T-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 4A FLP |
More Detail: | Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1.5W T... |
DataSheet: | 2SC4731T-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 1.5W |
Frequency - Transition: | 180MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 No Tab |
Supplier Device Package: | FLP |
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The 2SC4731T-AY is a single bipolar junction transistor (BJT) designed for use in a wide range of applications, from audio amplifiers and digital circuits to audio power amplifiers. It is a low power NPN transistor with a maximum collector-base voltage of 46 V and a maximum collector current of 200 mA. The 2SC4731T-AY has an excellent current gain (beta) of 180 at an emitter current of 25 mA. It is designed for use in both digital and analog circuits, and its high beta makes it a good choice for both low- and high-voltage applications.
The working principle of the 2SC4731T-AY is based on the basic operation of a BJT. A BJT consists of three layers of semiconductor material. The first layer consists of a P-doped semiconductor called the emitter. This layer emits charge carriers called electrons, which are negative. The second layer is a lightly-doped N-type semiconductor called the base. This layer is used to control the flow of electrons between the emitter and the collector. The third layer, the collector, is made of a heavily doped N-type material and is used to collect electrons from the base and emit them to the outside circuit.
In operation, current from the emitter is injected into the base, but only a fraction of this current can cross the narrow base region and pass into the collector due to the depletion layer in the base region. This fraction is referred to as "current gain". The current gain of the 2SC4731T-AY is 180, which means that for every 1 mA of current injected into the base, 180 mA will pass across the base region and into the collector. This current can then be used to drive any external load connected to the transistor.
The 2SC4731T-AY has a wide range of applications, from small signal amplifiers and digital circuits to audio power amplifiers. It is well suited for use in high-speed switching applications due to its low switching speed and low-noise operation. The transistor can also be used in analog circuits such as oscillators, current mirrors, and current mirrors for current limiting applications. It can also be used in low-voltage power applications, such as for motor-control circuits.
The 2SC4731T-AY is a versatile transistor with a wide range of uses. It is ideal for digital and analog circuits, high-frequency switching, low-noise operation, low-voltage power applications, and current limiting applications. The device is well suited for audio amplifiers and power amplifiers. Its excellent current gain and wide voltage range make it a suitable choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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