2SC4808G0L Allicdata Electronics
Allicdata Part #:

2SC4808G0LTR-ND

Manufacturer Part#:

2SC4808G0L

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 10VCEO 80MA SSMINI-3
More Detail: RF Transistor NPN 10V 80mA 6GHz 125mW Surface Moun...
DataSheet: 2SC4808G0L datasheet2SC4808G0L Datasheet/PDF
Quantity: 3000
3000 +: $ 0.14135
Stock 3000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 800MHz
Gain: 11dB ~ 14dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
Base Part Number: 2SC4808
Description

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The 2SC4808G0L is a bipolar RF transistor used in communication and ham radio equipment. It is an NPN device with an active base, and is capable of handling up to 14 watts of power. This makes it an ideal choice for transmitting and receiving applications requiring higher levels of power.

The 2SC4808G0L transistors are ideal for applications that require high frequency operation, such as radio waves and RF signals. It can also be used as a buffer or amplifier, allowing for signal processing and amplification. Because of its high frequency operation and wide dynamic range, it is well-suited for use in amateur, commercial, and professional radio applications.

The 2SC4808G0L operates using two main operating principles. The first is bipolar junction transistor (BJT) technology, which is a type of transistor in which current flows between two layers of semiconductor material. The BJT works by controlling the voltage and current applied to the base, which in turn controls the current and voltage flowing to the collector and emitter. This allows the transistor to modulate and switch signals in response to variations in the base voltage. The second is field-effect transistor (FET) technology, which involves controlling the current between two terminals by changing the electric field applied to the base.

The 2SC4808G0L is designed for use in the 27-28MHz VHF band and has a gain of 10dB. It is also quite efficient, having a power output of 14W when operated at a supply voltage of 12V. It also has a wide range of operating temperature ranges, from -40°C to +85°C, making it suitable for use in a wide range of environments.

In addition to its functionality, the 2SC4808G0L is also well-suited for use in high-power applications. It can be used in RF amplifiers, RF mixers, modulators, receivers, and transmitters in order to increase both output power and efficiency. It is also ideal for amplifier and mixer applications that need to be very efficient while also maintaining a high level of signal fidelity.

For applications in communication and ham radio equipment, the 2SC4808G0L is an ideal choice. With an active base, high frequency operation, wide dynamic range, and high efficiency, it is perfect for applications that require high levels of power. Additionally, it is designed to operate in a wide range of temperature ranges, from -40°C to +85°C, making it suitable for use in a wide array of environments. This combination of features makes the 2SC4808G0L an excellent choice for those seeking a reliable and powerful transistor.

The specific data is subject to PDF, and the above content is for reference

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