2SCR572D3TL1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 100mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 3V
Power - Max:	10W
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252

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2SCR572D3TL1 Application Field and Working Principle

2SCR572D3TL1 is a single bipolar junction transistor (BJT) developed by Toshiba Semiconductor and Storage Corporation. It is mainly intended for use in switching, radio frequency, amplifier and other digital and analog applications. The 2SCR572D3TL1 transistor is a NPN type of BJT which features high operating voltage and high current capacity. It has a maximum voltage rating of 30V and a maximum continuous current of 1A. It also features a collector-emitter saturation voltage VCE(sat) of 0.35V and a base-emitter saturation voltage Vbe(sat) of 0.6V. The hFE of the device is relatively low, with a minimum of 30 and a maximum of 100. It also has a storage temperature range of -55C to +150C and a junction temperature range of -55C to +150C. The 2SCR572D3TL1 is packaged in a standard sot-23 package.The working principle of a NPN type BJT is found in its construction. It consists of three layers of semiconductor material: the emitter, the base, and the collector. At the junction between the emitter and the base layers, electrons are injected into the junction by the emitter. When a current is applied to the base of the transistor, these electrons are pushed sideways creating a region with an excess of electrons which becomes the “active region”. This region is surrounded by a region with a deficiency of electrons which becomes the “collector region”. In the active region, a charge-store region is created. With the collector, current can now flow from the emitter to the collector and to ground, creating a conducting path between the two. This is the basic mechanism for the NPN type BJT. Depending on the application, the current flow will vary from low currents to high currents, corresponding to a low-power or a high-power voltage range. Since its introduction in 2013, the 2SCR572D3TL1 has been used in many applications such as motor control systems, adjustable power supplies, motor drivers, lighting systems, current sources and voltage regulators. It has a wide range of applications, making it suitable for many applications.To illustrate the working principle of the 2SCR572D3TL1, consider the following example. Suppose you are building an adjustable power supply. A number of currents must be generated and adapted to different levels, and a voltage regulator is used to ensure that the output voltage stays constant. The 2SCR572D3TL1 transistor can be used as a current source by connecting its collector and emitter terminals to the supply line. The base input is supplied with a voltage that can be adjusted depending on the changes in the output voltage. As the input voltage increases, more electrons are injected into the transistor, increasing the current flowing through it and consequently adjusting the output voltage. In conclusion, the 2SCR572D3TL1 is a single bipolar junction transistor (BJT) developed by Toshiba Semiconductor and Storage Corporation which is mainly intended for use in switching, radio frequency, amplifier and other digital and analog applications. It features a maximum voltage rating of 30V, a maximum continuous current of 1A, and a collector-emitter saturation voltage VCE(sat) of 0.35V. It has a wide range of applications and can be used for adjustable power supplies, motor drivers, lighting systems and other applications.

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