Allicdata Part #: | 2SCR522UBTL-ND |
Manufacturer Part#: |
2SCR522UBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 20V 0.2A UMT3F |
More Detail: | Bipolar (BJT) Transistor NPN 20V 200mA 400MHz 200m... |
DataSheet: | 2SCR522UBTL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 2V |
Power - Max: | 200mW |
Frequency - Transition: | 400MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | UMT3F |
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The 2SCR522UBTL is a transistor that falls under the category of Bipolar (BJT) Single. It is ideal for usage in many areas and has several distinguishing features. In this article, the application field and working principle of the 2SCR522UBTL transistor will be discussed in detail.
The 2SCR522UBTL is mainly used in electronic circuits that require high power switching and linear amplification. It is quite versatile and well-suited for many industrial applications, including switching elements in electronic apparatus, inverters, amplifiers, electronic fans, and solenoid valves. It is also used in audio circuits like power amplifiers and motor controls.
The 2SCR522UBTL belongs to the class of NPN transistors. It is fabricated with an epitaxial construction and a silicon substrate. The transistor is sealed in a waterproof plastic case and has a current gain that is adjustable from 40 to 600. The maximum collector-emitter voltage of this transistor is 250 volts. It is equipped with a three-terminal base for easy mounting.
Working Principle of 2SCR522UBTL Transistor:
This transistor works on the principle of majority current injection. When a positive current is applied to the transistor\'s base terminal, majority carriers, in this case electrons, are injected into the collector region and a voltage is generated across the collector-emitter terminals. This voltage controls the current flow and is used to switch the device.
The current gain of the transistor is determined by the ratio between the collector current and the base current. The higher the base current, the greater the current gain and vice versa. The base-to-emitter voltage of this transistor is typically in the range of 1 to 8 volts.
The collector current is usually limited by the power dissipated in the transistor. The power dissipated across the collector-emitter junction depends on the current gain, the collector-emitter voltage, and the collector current. The maximum power dissipation of the 2SCR522UBTL is 250 watts.
The 2SCR522UBTL is a highly reliable and durable transistor. It can be used in high-temperature and high-voltage applications. It is also designed to withstand load fluctuations and has excellent switching characteristics. The transistor is designed to operate with low power consumption and is capable of handling large signals.
The 2SCR522UBTL transistor is a great choice for many applications and is easy to use. Its adjustable current gain and excellent durability make it an ideal choice for general-purpose switching applications. Its highly reliable construction ensures long-term performance and operational efficiency.
The specific data is subject to PDF, and the above content is for reference
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