Allicdata Part #: | 2SJ360(F)-ND |
Manufacturer Part#: |
2SJ360(F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 60V 1A SC-62 |
More Detail: | P-Channel 60V 1A (Ta) 500mW (Ta) Surface Mount PW-... |
DataSheet: | 2SJ360(F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-243AA |
Supplier Device Package: | PW-MINI |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 155pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 730 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2SJ360(F) is a type of FET, or field effect transistor. It is a single MOSFET, which is a three-terminal device composed of source, gate, and drain that can be used to switch or amplify an electrical signal. This type of FET is ideal for use in high-frequency switching, analog and digital circuit control, and power management. The 2SJ360(F) is a particularly useful type of FET because it is capable of handling up to 30V of drain-source voltage, up to 12W of max power dissipation, and can switch up to 200mA of drain current.
A FET is a semiconductor device that utilizes an electric field in order to control current flow. In the 2SJ360(F), the electric field is created by applying a voltage between the source and the gate terminals. This voltage causes the electric field to become active and the current between the source and the drain to flow. When the voltage is removed, the electric field is now inactive and the current flow stops. This process is known as “enhancement” and is the basis for how a FET works.
The source and drain of the 2SJ360(F) are both P-type semiconductor material, and the gate is an N-type semiconductor material. This creates a “P-N” junction between the source and gate terminals. When the voltage is applied to the gate, it creates a positive influence to electrons in the N-material, allowing them to easily flow through the junction to the P-material. This allows a current to flow between the source and the drain. Thus, when voltage is applied to the gate, the 2SJ360(F) is “on.” The higher the applied voltage, the stronger the current flowing through it will be, until it reaches its peak current limit.
The 2SJ360(F) is a particularly useful FET because it can handle relatively high power. This makes it ideal for use in applications such as power management and high frequency switching. The device can also be used for analog and digital circuit control, providing precise control of current flow. Additionally, with its low RDS(on), the device can provide higher efficiency in its operations. This makes it ideal for applications that require precision and efficiency at the same time.
In short, the 2SJ360(F) is a type of single MOSFET that is ideal for use in high-frequency switching, analog and digital circuit control, and power management. It can handle high power, offers low RDS(on), and has precise current control capabilities. Thus, it can be an extremely useful device in many applications.
The specific data is subject to PDF, and the above content is for reference
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ERG-2SJ390V | Panasonic El... | 0.03 $ | 4000 | RES 39 OHM 2W 5% AXIAL39 ... |
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