
Allicdata Part #: | 2SJ377NQTR-ND |
Manufacturer Part#: |
2SJ377(TE16R1,NQ) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 60V 5A PW-MOLD |
More Detail: | P-Channel 60V 5A (Ta) 20W (Tc) Surface Mount PW-MO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PW-MOLD |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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2SJ377 (TE16R1,NQ) is a power MOSFET of the N-channel enhancement-mode type. It is designed to realize high-speed switching, by taking advantage of the small on-resistance, low gate charge and low drain-source capacitance. This device is suitable for use with low operating voltages and large currents, and provides high reliability and excellent performance.
Application field
2SJ377 (TE16R1,NQ) is designed for application in low-voltage, high-current circuits, specifically in power supply, audio, and lighting circuits. In addition, this device is also suitable for high switching frequency applications such as motor control, switch mode power supplies, or power transistors.
Working principle
2SJ377 (TE16R1,NQ) is an N-channel, power MOSFET which offers low on-resistance, low gate charge and very low drain-source capacitance. The MOSFET has three terminals: source, drain, and gate. The source is the negative terminal and the drain is the positive terminal. The gate is a control terminal which when voltage is applied to it, increases the electric field between the source and drain. This increases the conductivity of the channel and allows electrons to flow easily from source to drain, allowing the MOSFET to act as a switch. When there is no voltage applied to the gate, electrons are blocked from flowing, and the MOSFET acts as an insulator. This allows for effective and efficient control of large currents.
2SJ377 (TE16R1,NQ) is designed to withstand high voltage and high current, allowing it to switch large amounts of power in circuit. This makes it suitable for use in switching mode power supplies, motor control, and power transistor applications. The device offers a wide range of operating temperatures, making it suitable for a variety of conditions and temperature ranges. The device also provides excellent thermal performance, meaning it can handle large amounts of heat without needing additional cooling.
2SJ377 (TE16R1,NQ) is a highly reliable and effective power MOSFET, designed for use in low-voltage, high-current applications. It is easy to operate, and provides high performance and excellent thermal performance. This makes it suitable for a variety of applications such as switch mode power supplies, motor control, and power transistor applications.
The specific data is subject to PDF, and the above content is for reference
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