2SJ380(F)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SJ380(F) is a type of semiconductor device classified as a single, Field Effect Transistor (FET) or a Metal Oxide Silicon Field Effect Transistor (MOSFET). Basically, the device is a power amplifier for high power applications that requires large current, such as radio transmitters, satellite TV and audio amplifiers.

A single FET has three terminals: the source, the drain and the gate. In an n-channel FET, the source is negative and the drain is positive. When a voltage is applied to the gate, it allows the current to flow from the source to the drain. The more current that flows, the greater the power output.

The 2SJ380(F) is a vertical double diffused MOSFET with a maximum power output of 140 watts. It consists of two layers of gallium arsenide (GaAs) separated by an oxide insulator. It also has two silicon p-n junctions (diodes) across the two GaAs layers. Each diode produces a fixed voltage drop which is used to control the voltage and current across the MOSFET.

The 2SJ380(F) can be used in any power amplifier application that requires large current. Its main feature is its high power output. It can be used to drive large speakers and can be used in audio power amplifiers, radio transmitters and satellite TV applications. The device can also be used in industrial applications where high power is required, such as in electric motors and welders.

The working principle of the 2SJ380(F) is based on the principle of the field effect transistors. A gate voltage is applied to the device, which causes a depletion layer to develop in the drain region. The depletion layer provides a barrier to the flow of electric current from the source to the drain. The size of this barrier can be adjusted by varying the gate voltage, meaning that the amount of flow between the source and the drain can be controlled.

The 2SJ380(F) is a vertical double diffused MOSFET with a maximum power output of 140 watts. It is used in power amplifier applications and applications in which high power is required such as electric motors and welders. Its operating principle is based on the field effect transistors, in which a gate voltage is applied to the device to control the flow of current from the source to the drain. Its main feature is its high power output, making it suitable for driving large speakers, radio transmitters and satellite TV applications.

The specific data is subject to PDF, and the above content is for reference