Allicdata Part #: | 3LP01C-TB-H-ND |
Manufacturer Part#: |
3LP01C-TB-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 100MA CP |
More Detail: | P-Channel 30V 100mA (Ta) 250mW (Ta) Surface Mount ... |
DataSheet: | 3LP01C-TB-H Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 250mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7.5pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 1.43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.4 Ohm @ 50mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are transistors that amplify analog and digital signals by combining the advantages of voltage control with low input capacitance and low current drain. They have a wide range of applications and are used in a variety of electronic devices, such as amplifiers, logic gates, data converters, and microchips. A 3LP01C-TB-H is a specific type of MOSFET.The 3LP01C-TB-H has the same basic flow of electrons from gate to drain and from source to drain as any other FET or MOSFET. The gate controls how many electrons are allowed to pass through the drain, and the source supplies the voltage necessary for this flow. In this particular device, the gate can be driven voltage from -20V to 20V, and the maximum drain current is 7.5A.The 3LP01C-TB-H is primarily used in power management applications such as motor or solenoid control, as well as high-efficiency buck-boost and current-mode control designs. It is also used in applications where fast switching speed is required, such as pulse width modulation (PWM) and time division multiplexing (TDM). It can be used to control lighting, as well as audio and video equipment.In terms of its working principle, when a voltage is applied to the gate of the 3LP01C-TB-H, it creates a depletion region within the transistor. This depletion region creates a potential barrier which prevents electrons from passing through the drain unless a positive bias is supplied. When the device is turned on, this allows the electrons to flow from the source to the drain and vice-versa. Once the voltage bias is removed, the depletion region is removed and the electrons stop flowing.The 3LP01C-TB-H is a high speed, low current FET that is perfect for use in high power applications. It has a wide range of uses, from controlling lighting and audio and video equipment, to motor and solenoid control, and even high-efficiency current-mode control designs. With its low input capacitance and low current drain, it combines all the advantages of voltage control in one, making it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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