3LP01M-TL-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 3LP01M-TL-E is a low resistance, low capacitance insulated-gate field effect transistor (IGFET) with a maximum drain-source resistance (RDS(on)) of 1 mΩ, making it ideal for power management applications where high efficiency is required.
The 3LP01M-TL-E has several features that set it apart from other transistors. First, it has a large input resistance (RIN), which is important for applications that require tight regulation of the drain current. Second, its low capacitance (CISS) and high transconductance (gfs) help to reduce power dissipation. Third, its low drain-source on-state resistance minimizes the power losses from ohmic heating. Lastly, its maximum voltage withstand (VDSS) of 20 volts makes it suitable for many applications.
The 3LP01M-TL-E utilizes a depletion-mode, normally-off operation. In other words, when no gate voltage is applied, the transistor is in a non-conducting state, preventing any current from flowing through the transistor. This prevents unwanted power dissipation and reduces power losses from the device. In order for the transistor to become conducting, a gate voltage is applied, which causes the drain current to increase. As the gate voltage increases, the drain current increases linearly, until it reaches its maximum value, which is determined by the transistor’s maximum drain-source voltage (VDSS).
The 3LP01M-TL-E is well-suited for many different types of power management applications, such as DC-DC converters, switching regulators, motor control, AC/DC converters, and buck-boost converters. The transistor’s low on-state resistance and high transconductance make it ideal for these types of applications, as they allow for more efficient power management. Additionally, the transistor’s low switching losses, combined with its low gate charge, result in higher overall efficiency. The transistor is also well-suited for LED lighting applications, due to its low drain-source on resistance, low capacitance, and high voltage withstand.
In conclusion, the 3LP01M-TL-E is an ideal transistor for many power management and LED lighting applications, due to its low on-state resistance and low capacitance. Its low switching losses and high voltage withstand also make it a great choice for these types of applications, as it helps to maximize efficiency. Its normally-off operation helps to reduce power losses and increases efficiency even further. The 3LP01M-TL-E is a great choice for many different power management and LED lighting applications.

The specific data is subject to PDF, and the above content is for reference