3LP01SS-TL-E Discrete Semiconductor Products |
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Allicdata Part #: | 3LP01SS-TL-EOSTR-ND |
Manufacturer Part#: |
3LP01SS-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 0.1A SMCP |
More Detail: | P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | 3LP01SS-TL-E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-81 |
Supplier Device Package: | 3-SSFP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7.5pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 1.43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.4 Ohm @ 50mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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3LP01SS-TL-E Application Field and Working Principle
3LP01SS-TL-E is an enhancement mode Power MOSFET multiplexer device from Toshiba, which integrates an ESD protection circuit to protect against ESD (Electro Static Discharge) and ESE (Electro Static Sensitivity) damage. It offers high-speed switching, low gate-source capacitance and low on-state resistance. It is suitable for mobile phones, battery charging control, and other high-voltage, low-power applications.
Features
- Integrated ESD Protection Circuit
- High-Speed Switching
- Low Gate-Source Capacitance
- Low On-State Resistance
- Operating Voltage: -0.3V to 12V
- ESD Protection level: ± 1500V Human Body Model
Working Principle
The 3LP01SS-TL-E is an enhancement mode Power MOSFET multiplexer device. It is composed of two NMOS transistors with separated source and drain connections, operated in a “totem pole” configuration. The two transistors are connected in parallel, connected at the source connection point. When the control voltage (VGS) is below the threshold voltage (Vth), the device is in the “OFF” state. In this state, the current flow from the source is blocked by the transistor. When the control voltage (VGS) is above the threshold voltage (Vth), the device is in the “ON” state and the current flow from the source to the drain is allowed.
The 3LP01SS-TL-E also has a low gate-source capacitance and a low on-state resistance, which enables it to switch faster, reducing unwanted electrical noise. The on-state resistance shows the amount of resistance when the device is on, and is usually proportional to the device\'s supply voltage. The low gate-source capacitance is determined by the channel width and the channel length, which is usually proportionate to the size and the number of transistors used in the design.
Applications
The 3LP01SS-TL-E is suitable for a wide variety of applications such as mobile phones, battery charging control, and other high-voltage, low-power applications. It is ideal for applications where a device is required to switch quickly and with minimal electrical interference.
The 3LP01SS-TL-E is also ideal for applications where protection against ESD and ESE damage is required. It has an integrated ESD protection circuit which helps to protect the device against ESD damage. It is also suitable for a wide range of operating voltages, making it useful for applications requiring different supply voltages.
Conclusion
The 3LP01SS-TL-E from Toshiba is an enhancement mode power MOSFET multiplexer device with integrated ESD protection. It has a low gate-source capacitance and a low on-state resistance, enabling it to switch faster and with minimal electrical interference. It also has a wide range of operating voltages, making it suitable for a variety of high-voltage, low-power applications including mobile phones and battery charging control.
The specific data is subject to PDF, and the above content is for reference
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