3LP01S-TL-E Discrete Semiconductor Products

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3LP01S-TL-E is a single N-channel enhancement mode FET transistor. This type of transistor is a common component in many circuits or devices. It has a wide range of applications, from power amps to amplifier protection, making it a versatile component to have in any electronic component library.

The 3LP01S-TL-E is a general purpose transistor, which makes it suitable for a variety of applications. It is particularly useful for audio and video applications, where it can be used as a signal amplifier or pre-amp in order to increase signal strength. It can also be employed as a level shifter, switching circuits or voltage regulator, or as a power amplifier.

The 3LP01S-TL-E transistor is designed to operate in the enhancement mode. This means that in order to achieve a certain output, an input signal must be present and it must be greater than the threshold voltage of the transistor. The threshold voltage is the minimum voltage needed to switch the transistor on. Once the threshold voltage has been reached, the transistor will begin to conduct and provide an output signal.

The 3LP01S-TL-E transistor has a drain-source resistance of 4.5 ohms. This is the resistance of the path between the drain and source terminals when the transistor is on. This resistance is important in determining the voltage present at a certain node in the circuit. It also determines the amount of power that the transistor can handle and how much current it can handle.

The gate of the 3LP01S-TL-E transistor is the control terminal. When a voltage is applied to the gate terminal, it controls the source-drain current. A positive voltage on the gate terminal will cause the source-drain current to increase, while a negative voltage will cause it to decrease. The gate-source voltage of the 3LP01S-TL-E is -2 volts. This means that the gate voltage must be lower than the voltage at the source terminal in order for the transistor to conduct.

The 3LP01S-TL-E also features a breakdown voltage of 30 volts, which is the maximum voltage at which the transistor can operate without sustaining permanent damage. It also has a maximum collector current of 200mA, and a maximum power dissipation of 350mW.

In conclusion, the 3LP01S-TL-E is a versatile, single N-channel enhancement mode FET transistor. It can be used for a variety of applications, including audio and video amplification, level shifting, and voltage regulation. It has a drain-source resistance of 4.5 ohms, a gate-source voltage of -2 volts, a breakdown voltage of 30 volts, and a maximum collector current of 200mA. With its wide range of applications and features, the 3LP01S-TL-E is a convenient and reliable transistor to have in any electronic component library.

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