Allicdata Part #: | 3LP01SS-TL-H-ND |
Manufacturer Part#: |
3LP01SS-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 0.1A SMCP |
More Detail: | P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | 3LP01SS-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SMCP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7.5pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 1.43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.4 Ohm @ 50mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 3LP01SS-TL-H is a type of power insulated gate bipolar transistor (IGBT), intended for application in high-power switching fields. It is one of the newest developments in IGBT technology and is specifically designed for high-frequency switching and has far better performance than conventional insulated gate bipolar transistors. As such, it is ideal for use in industrial power electronics, lighting, air conditioning, motor control and other fields.
An IGBT essentially consists of three terminals, namely, an emitter, base and collector. It works by using an input voltage applied between the base and emitter, to start current conduction between the collector and emitter. This is essentially a field effect transistor, operating as an insulated gate electro-mechanical switch. It has two operational states, identified as ON and OFF, depending on the voltage applied at the gate terminal. In the ON state, the 3LP01SS-TL-H IGBT passes current between its collector and emitter, due to the operation of its internal circuitry. In the OFF state, it does not pass any current and reduces the power dissipation to an extremely low level.
The 3LP01SS-TL-H IGBT has a unique gate configuration, consisting of an insulated gate, in both the ON and OFF states. This helps to reduce the losses associated with the high frequency switching, by preventing the short circuit current from occurring. This gate configuration also helps in reducing the bus switching losses and making the device extremely efficient. The device also has an integrated inverter, which helps to control the current flow, and reduce the power losses due to the switching.
The 3LP01SS-TL-H is designed to operate at very high frequencies, so that it can easily be used in applications such as air conditioning, motor control and other fields. The device can also be used in high-speed chopper circuits, to ensure fast switching of the load and the associated currents. The device also has an internal thermal protection system, which helps to keep the device from overheating, as well as to maintain a stable operating temperature.
The 3LP01SS-TL-H IGBT can also be used in high-power LED lighting applications, where it can be used to control the current flow of the LED. These devices are also widely used in power semiconductor applications such as rectifiers, converters and high-power inverters. This makes them ideal for use in power conversion, lighting and air conditioning applications.
In summary, the 3LP01SS-TL-H is a powerful and efficient power IGBT, specifically designed for applications where high-frequency switching is required. Its gate configuration reduces switching losses and increases efficiency, while its internal thermal protection system helps to maintain a stable operating temperature. In addition, the device can be used in high-power LED lighting applications, and for power semiconductor applications like rectifiers and converters. This makes the 3LP01SS-TL-H a versatile and flexible IGBT, with great performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
3LP01M-TL-E | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 0.1AP-Cha... |
3LP01S-K-TL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 0.1AMOSFE... |
3LP01C-TB-H | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 100MA CPP... |
3LP01SS-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V 0.1A SMCP... |
3LP01C-TB-E | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 100MA CPP... |
3LP01M-TL-H | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 0.1A MCPP... |
3LP01S-TL-E | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 0.1A SMCP... |
3LP01SS-TL-E | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 0.1A SMCP... |
3LP01SS-TL-EX | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 30V SOT-623P-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...