5HP01C-TB-H Allicdata Electronics
Allicdata Part #:

5HP01C-TB-H-ND

Manufacturer Part#:

5HP01C-TB-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 70MA SMD
More Detail: Surface Mount 3-CP
DataSheet: 5HP01C-TB-H datasheet5HP01C-TB-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Supplier Device Package: 3-CP
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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5HP01C-TB-H is a MOSFET which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. MOSFETs are voltage-controlled devices that allow current to flow through the device depending on the voltage across the gate-source junction. MOSFETs are commonly used for switching and amplifying electronic signals because of their high input impedance and low output impedance. In this article we will discuss the application field and working principle of the 5HP01C-TB-H MOSFET.

The 5HP01C-TB-H MOSFET is an N-type Enhancement Mode MOSFET and is suitable for applications that require high switching speeds and low resistances. The 5HP01C-TB-H has a drain-source voltage of 500V and a drain current of 5A and a peak pulse current of 20A. It has a drain-source capacitance of 3.8pF and a gate charge of 6nC. It offers a low on-state resistance of 0.009Ω and a fast switching speed of 10ns. The 5HP01C-TB-H is well suited for applications such as motor control, power switches, high voltage logic level switches, etc.

The working principle of the 5HP01C-TB-H MOSFET is based on the MOSFET’s ability to control current flow by applying a voltage to its gate terminal. When a positive voltage is applied to the gate terminal of the device, the electric fields generated near the gate terminal modifies the device’s conductivity. This conductivity modification enables current to flow through the device as shown in the figures below. The amount of current that flows through the channel is proportional to the amount of voltage applied to the gate. This allows the device to act as an amplifier and switch for electric signals.

MOSFET diagram

By controlling the electric fields near the gate terminal, the 5HP01C-TB-H MOSFET can be used to amplify signals, switch signals, and regulate current flow. For example, the 5HP01C-TB-H MOSFET can be used to regulate the current flow through a motor in order to increase or decrease the speed of the motor. It can also be used to amplify signals from a control circuit in order to control the speed or position of a motor. In addition, the 5HP01C-TB-H MOSFET can be used as a switch to control the flow of current through a circuit.

In summary, the 5HP01C-TB-H is a N-type Enhancement Mode MOSFET which is suitable for applications that require high switching speeds and low resistances. The 5HP01C-TB-H is well suited for a variety of applications such as motor control, power switches, high voltage logic level switches, etc. due to its high drain-source voltage of 500V, 5A drain current, and fast switching speeds of 10ns. The device is able to control current flow by applying a voltage to its gate terminal, allowing it to act as an amplifier, switch, or regulator for electric signals.

The specific data is subject to PDF, and the above content is for reference

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