5HP01M-TL-E

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The 5HP01M-TL-E is a Silicon N-channel MOSFET transistor released by the Korea Electronics industry. It is a single MOSFET, designed to pass high volumes of current to the outputs that require a low voltage current. It has a low on-resistance and is available in both 8.0 V and 10.0 V versions.

This MOSFET is a silicon N-channel FET, and can be used as a switch, either to control current, or to provide an isolation barrier between DC and AC signals. As a switching device, it is ideal for applications such as power management, analog signal conditioning, and low voltage audio amplifiers.

The 5HP01M-TL-E has two terminals: source and drain. A signal at the gate controls the flow between these terminals. When the signal is low, current is shut off, and when it is high, current can flow from the source to the drain.

The 5HP01M-TL-E is designed with a low off-state current leakage. This allows it to transfer large amounts of current without generating excess heat. The transistor also features an increased gate threshold voltage and an increased diode reverse leakage (DRL) current.

The main features of the 5HP01M-TL-E are:

• Low on-resistance
• Low off-state current leakage
• Low gate threshold voltage
• Increased diode reverse leakage current

The construction of the 5HP01M-TL-E consists of a P-type silicon substrate, where an N-type well is formed on top. A gate electrode is formed between the P- and N-type regions, and the MOSFET is formed by creating a doped N-channel from the gate to the N-type region.

The working principle behind the 5HP01M-TL-E is based on the Gate Control Effect. When the input signal is low, the gate turn off current is large, and current does not flow between the source and drain. When the input signal is high, the gate turn off current is reduced and current can flow from the source to the drain.

In conclusion, the 5HP01M-TL-E is a single MOSFET designed to pass high volumes of current to the outputs that require a low voltage current. It has low on-resistance and its construction consists of a P-type silicon substrate, where an N-type well is formed on top, with a gate electrode forming a channel between the regions, Through the Gate Control Effect, it can be used as a switch, either to control current, or to provide an isolation barrier between DC and AC signals.

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