5HP01M-TL-H Discrete Semiconductor Products

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5HP01M-TL-H FeaturesThe 5HP01M-TL-H is a high-performance field-effect transistor (FET) designed for a wide variety of applications. It features low input capacitance and a maximum power dissipation of 1W.The 5HP01M-TL-H is a single channel, drain-to-source voltage enhanced FET. The product has a maximum drain-to-source voltage rating of 12V and a maximum continuous drain current of 4.0A. It is functionally equivalent to the NTE123AP-TL-H.The 5HP01M-TL-H is a high-performance Field-Effect Transistor (FET) that provides enhanced performance over that of conventional silicon FETs. It features low input capacitance, low on- resistance, fast switching, and high resistive gate-threshold voltage-temperature characteristics. The FET is designed for a wide range of applications, including power amplifiers, power switching circuits as well as high-speed data applications.Application Fields and Working PrinciplesThe 5HP01M-TL-H can be applied in a variety of applications, including analog and digital circuits, industrial control, low-voltage high-speed switching and telecommunication systems.The 5HP01M-TL-H is a high-performance Field-Effect Transistor (FET) that can be used in a variety of switching and control applications. The device features low on-resistance and high resistive gate-threshold voltage-temperature characteristics. The 5HP01M-TL-H is a single-channel device, with a maximum drain-source voltage rating of 12V and a maximum continuous drain current of 4.0A.The 5HP01M-TL-H is an enhancement mode FET that functions on the principle of using a gate voltage to control the current flow through the channel between the source and the drain. When the gate voltage is low, current flows between the source and the drain. When the gate voltage is high, the FET acts as an open circuit and no current can flow between the source and the drain. The gate voltage is used to control the resistance between the source and the drain.The 5HP01M-TL-H is a great choice for many applications because of its low on-resistance and its high gate-threshold voltage-temperature characteristics. This makes it suitable for low-voltage high-frequency applications and power switching circuits.ConclusionThe 5HP01M-TL-H is a high-performance Field-Effect Transistor (FET) designed for a variety of applications. It features low input capacitance, low on-resistance, and fast switching time with a maximum power dissipation of 1W. The FET is suitable for use in analog and digital circuits, industrial control, low-voltage high-speed switching, and telecommunication systems. The 5HP01M-TL-H is a single-channel FET with a maximum drain-to-source voltage rating of 12V and a maximum continuous drain current of 4.0A. It is a great choice for low-voltage high-frequency applications and power switching circuits.

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