5HP01SS-TL-E Allicdata Electronics
Allicdata Part #:

5HP01SS-TL-E-ND

Manufacturer Part#:

5HP01SS-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 70MA SSFP3
More Detail: Surface Mount 3-SSFP
DataSheet: 5HP01SS-TL-E datasheet5HP01SS-TL-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Package / Case: 3-SMD, Flat Leads
Description

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5HP01SS-TL-E is a single FET (Field Effect Transistor) from Rutronik. It has an extended temperature range from -40ºC to +125ºC, plus a wide range of features, including an ultra-low on-resistance wattage of 2.4mΩ that provides superior power protection. Features such as low gate threshold voltage, high-current output and low-noise operation make this an ideal choice for applications requiring reliable power control.

Application Field

The 5HP01SS-TL-E is a high-performance FET primarily designed for applications involving power management. Examples of these applications are power supplies, DC-DC converters, switched-mode power inverters, and motor drives. In addition, it can be used in other sectors, such as medical and industrial control and in automotive systems.

This FET offers superior levels of performance and protection, making it an excellent choice for high-power applications. It is also an ideal choice for applications involving high-efficiency and high-temperature operation, such as those in the automotive and industrial markets. This FET can be used for switching applications that are frequency-sensitive and where fast switching speeds are required, such as switching power supplies and motor drives.

Working Principle

The 5HP01SS-TL-E is an n-channel MOSFET that uses the principles of metal-oxide-semiconductor technology. It is essentially an amplifier with three terminals - the gate, drain and source. The gate terminal controls the amount of current passing through the channel. A voltage applied to the gate controls the current flow between the source and the drain by changing the channel resistance.

When no voltage is applied to the gate, the FET is in its “off” state and the drain-source resistance is very high, effectively stopping any current from passing through. When a positive voltage is applied to the gate, it will reduce the channel resistance, allowing current to freely flow between the drain and the source. This is referred to as the “on” state.

The 5HP01SS-TL-E has an ultra-low on-resistance wattage of 2.4mΩ which significantly improves the power dissipation. This, combined with its wide temperature range and fast switching speeds, makes it an ideal choice for high-powered switching applications.

Conclusion

The 5HP01SS-TL-E is a high-performance FET designed for applications involving power management. It offers superior on-resistance and power handling capabilities, combined with an extended temperature range, making it suitable for high-power applications. Additionally, its high-current output and low-noise operation make it an ideal choice for switching applications that require reliable power control.

The specific data is subject to PDF, and the above content is for reference

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