5HP01S-TL-E Allicdata Electronics
Allicdata Part #:

5HP01S-TL-E-ND

Manufacturer Part#:

5HP01S-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V 70MA SMCP3
More Detail: Surface Mount SMCP
DataSheet: 5HP01S-TL-E datasheet5HP01S-TL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Supplier Device Package: SMCP
Package / Case: SC-75, SOT-416
Description

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Field-effect transistors (FETs) are a type of transistor that uses an electric field to control the current flow. The 5HP01S-TL-E is a single-gate FET, meaning that it has one gate that controls the current flow between the source and the drain. This makes it useful for applications such as analog circuit design and power management.

The 5HP01S-TL-E is a high-performance FET with an improved specification over other standard FETs. It also has a compact package size, making it ideal for applications where space is limited. It can also be used for high-speed switching applications, as it has a low parasitic capacitance, making it more suitable for fast switching.

The 5HP01S-TL-E is a insulated-gate FET (IGFET) and it works by using an electric field to modify the conductivity of the channel between the source and drain. The gate is insulated from the channel and acts like a capacitor, so that when a voltage is applied to the gate, it modifies the electric field in the channel and changes the way it conducts.

In operation, the current flow between the source and the drain is controlled by the voltage applied to the gate. When the voltage on the gate is negative (called the cut-off voltage), the channel is "off" and no current flows. When the voltage is positive (called the threshold voltage), the channel is "on" and a current can flow between the source and drain.

The 5HP01S-TL-E is typically used in analog switching or voltage regulation applications. Since the channel resistance is low and there is no reverse leakage current, it can be used in low-noise circuits. It can also be used for high-frequency switching, as the parasitic capacitance is lower than that of other FETs. In addition, the 5HP01S-TL-E is more resistant to heat and can handle higher currents than other single-gate FETs.

So in summary, the 5HP01S-TL-E is a high-performance single-gate insulated-gate FET that is ideal for analog switch applications, power management, and high-frequency switching. It has a low parasitic capacitance and it is resistant to heat. The gate voltage is used to control the current flow between the source and the drain, and it is suitable for low-noise circuits.

The specific data is subject to PDF, and the above content is for reference

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