Allicdata Part #: | A2T21H100-25SR3-ND |
Manufacturer Part#: |
A2T21H100-25SR3 |
Price: | $ 52.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | IC RF LDMOS TRANS CELL |
More Detail: | RF Mosfet N-Channel |
DataSheet: | A2T21H100-25SR3 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 47.81480 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A2T21H100-25SR3 is a special type of field effect transistor (FET) that is specifically designed for use in radio frequency (RF) operations. This type of FET can be used in radio receivers and transmitters, as well as high-frequency switching systems and other high frequency applications. This article will discuss the application field and working principle of the A2T21H100-25SR3.
The A2T21H100-25SR3 was designed for use in radio frequency operations because of its good gain, low noise and high linearity. This means that the device is capable of providing a consistent signal with minimal distortion. The A2T21H100-25SR3 also has low input/output impedance, allowing it to be used as a buffer in many high frequency systems. In addition, the A2T21H100-25SR3 has wide temperature range, allowing it to be used in systems that require elevated operating temperature for extended periods of time.
The A2T21H100-25SR3 is a single transistor, which means that it consists of one transistor and its associated components. The transistor is constructed using MOSFET or metal-oxide-semiconductor field effect transistor technology. This technology has become increasingly popular in recent years, due to its ability to be scaled down to extremely small sizes while providing superior performance.
The transistor is the active element of the A2T21H100-25SR3, and it functions by controlling the flow of electrons through it. As the voltage applied to the gate of the transistor is increased, the number of electrons flowing through the transistor also increases. This increases the current flowing through the transistor, which produces a voltage across the source and drain terminals. This voltage is then used as either an input or output signal.
The A2T21H100-25SR3 is a versatile device that can be used in a variety of applications. It can be used in receivers and transmitters, as well as high frequency switching applications. It is also used in audio amplifiers and oscillators, operational amplifiers, active filters, and more. As such, the A2T21H100-25SR3 is a great choice for applications requiring high bandwidth and reliable performance in radio frequency operations.
In conclusion, the A2T21H100-25SR3 is a field effect transistor that is specifically designed for use in radio frequency operations. It has several features including good gain, low noise and high linearity that make it suitable for high frequency applications. Furthermore, it is simple to use and highly versatile, making it suitable for a wide variety of applications. With its combination of features and performance, the A2T21H100-25SR3 is a great choice for all kinds of radio frequency operations.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
A2T23H300-24SR6 | NXP USA Inc | 92.52 $ | 150 | IC TRANS RF LDMOSRF Mosfe... |
A2T27S007NT1 | NXP USA Inc | 4.18 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A2T27S020GNR1 | NXP USA Inc | 13.0 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A2T27S020NR1 | NXP USA Inc | 13.0 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A2T21H140-24SR3 | NXP USA Inc | 29.47 $ | 1000 | RF MOSFET LDMOS DUAL 28V ... |
A2T21S161W12SR3 | NXP USA Inc | 39.57 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A2T23H200W23SR6 | NXP USA Inc | 40.28 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A2T21S260W12NR3 | NXP USA Inc | 46.91 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A2T20H160W04NR3 | NXP USA Inc | 49.49 $ | 1000 | RF MOSFET LDMOS DUAL 28V ... |
A2T21H100-25SR3 | NXP USA Inc | 52.6 $ | 1000 | IC RF LDMOS TRANS CELLRF ... |
A2T21S160-12SR3 | NXP USA Inc | 63.48 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T23H160-24SR3 | NXP USA Inc | 64.59 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T26H165-24SR3 | NXP USA Inc | 66.38 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T21H360-23NR6 | NXP USA Inc | 82.71 $ | 1000 | RF TRANS 2.1GHZ 360W OM12... |
A2T26H300-24SR6 | NXP USA Inc | 92.88 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T26H160-24SR3 | NXP USA Inc | 94.9 $ | 1000 | FET RF 2CH 65V 2.58GHZRF ... |
A2T20H330W24SR6 | NXP USA Inc | 103.19 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T21S260-12SR3 | NXP USA Inc | 107.95 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T21H360-24SR6 | NXP USA Inc | 111.44 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T21H410-24SR6 | NXP USA Inc | 118.29 $ | 1000 | IC TRANS RF LDMOSRF Mosfe... |
A2T21H450W19SR6 | NXP USA Inc | 135.28 $ | 1000 | 2.1GHZ 450W NI1230S-4S4SR... |
A2T20H330W24NR6 | NXP USA Inc | 81.43 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...