A2T27S020NR1 Allicdata Electronics
Allicdata Part #:

A2T27S020NR1-ND

Manufacturer Part#:

A2T27S020NR1

Price: $ 13.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: AIRFAST RF POWER LDMOS TRANSISTO
More Detail: RF Mosfet LDMOS 28V 185mA 400MHz ~ 2.7GHz 21dB 20W...
DataSheet: A2T27S020NR1 datasheetA2T27S020NR1 Datasheet/PDF
Quantity: 1000
500 +: $ 11.81030
Stock 1000Can Ship Immediately
$ 13
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 400MHz ~ 2.7GHz
Gain: 21dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: --
Current - Test: 185mA
Power - Output: 20W
Voltage - Rated: 65V
Package / Case: TO-270-2
Supplier Device Package: TO-270-2
Description

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A2T27S020NR1 Application Field and Working Principle

A2T27S020NR1 is a 25V RF MOSFET which belongs to the A2T27SxxxNR1 series of RF MOSFETs developed by Taishan Semiconductor. It is a compact RF MOSFET device with excellent power, temperature and voltage characteristics. The device has a low on resistance RDS(ON) and high breakdown voltage of 25V.

Application Field

A2T27S020NR1 can be widely used in medium power communication systems such as mobile base station power amplifiers, wireless access points, home broadband, Wi-Fi and data center-related components as well as other commercial applications.

This device is suitable for operating in a wide range of frequency applications such as VHF, UHF and ISM bands, covering from 146MHz to 6GHz. Also, it is suitable for use in RF devices where excellent match and suppression of harmonic performance is required such as smart metering, domestic products, wireless communication systems, etc.

Working Principle

A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a type of transistor that operates by using a metal-oxide semiconductor material. It is used as a switch or amplifier of electrical signals. A MOSFET is a highly efficient device for regulating the flow of electric current in an electronic circuit.

The operating principle of the A2T27S020NR1 device involves two basic components: the gate and the source. The gate is the control device of the transistor, and it is used to regulate the flow of electric current from the source. In the on state, electrons from the source flow through the channel to the drain, allowing current to flow. The flow of current is controlled by the voltage applied to the gate.

In the off state, no current flows between the drain and the source, and the MOSFET acts as an open switch. The voltage applied to the gate keeps the channel blocked. This feature of MOSFETs makes them ideal for use in switching power supplies and other power control applications.

Conclusion

The A2T27S020NR1 is a highly efficient 25V RF MOSFET device with excellent power, temperature and voltage characteristics. It is suitable for use in medium power communication systems, wireless access points, and other commercial applications. The operating principle of the device involves a gate and a source, which is used to regulate the flow of electricity from the source.

The specific data is subject to PDF, and the above content is for reference

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