
Allicdata Part #: | A2T27S020NR1-ND |
Manufacturer Part#: |
A2T27S020NR1 |
Price: | $ 13.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | AIRFAST RF POWER LDMOS TRANSISTO |
More Detail: | RF Mosfet LDMOS 28V 185mA 400MHz ~ 2.7GHz 21dB 20W... |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 11.81030 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 400MHz ~ 2.7GHz |
Gain: | 21dB |
Voltage - Test: | 28V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 185mA |
Power - Output: | 20W |
Voltage - Rated: | 65V |
Package / Case: | TO-270-2 |
Supplier Device Package: | TO-270-2 |
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A2T27S020NR1 Application Field and Working Principle
A2T27S020NR1 is a 25V RF MOSFET which belongs to the A2T27SxxxNR1 series of RF MOSFETs developed by Taishan Semiconductor. It is a compact RF MOSFET device with excellent power, temperature and voltage characteristics. The device has a low on resistance RDS(ON) and high breakdown voltage of 25V.
Application Field
A2T27S020NR1 can be widely used in medium power communication systems such as mobile base station power amplifiers, wireless access points, home broadband, Wi-Fi and data center-related components as well as other commercial applications.
This device is suitable for operating in a wide range of frequency applications such as VHF, UHF and ISM bands, covering from 146MHz to 6GHz. Also, it is suitable for use in RF devices where excellent match and suppression of harmonic performance is required such as smart metering, domestic products, wireless communication systems, etc.
Working Principle
A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a type of transistor that operates by using a metal-oxide semiconductor material. It is used as a switch or amplifier of electrical signals. A MOSFET is a highly efficient device for regulating the flow of electric current in an electronic circuit.
The operating principle of the A2T27S020NR1 device involves two basic components: the gate and the source. The gate is the control device of the transistor, and it is used to regulate the flow of electric current from the source. In the on state, electrons from the source flow through the channel to the drain, allowing current to flow. The flow of current is controlled by the voltage applied to the gate.
In the off state, no current flows between the drain and the source, and the MOSFET acts as an open switch. The voltage applied to the gate keeps the channel blocked. This feature of MOSFETs makes them ideal for use in switching power supplies and other power control applications.
Conclusion
The A2T27S020NR1 is a highly efficient 25V RF MOSFET device with excellent power, temperature and voltage characteristics. It is suitable for use in medium power communication systems, wireless access points, and other commercial applications. The operating principle of the device involves a gate and a source, which is used to regulate the flow of electricity from the source.
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