A2T26H160-24SR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	2.58GHz
Gain:	15.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	350mA
Power - Output:	28W
Voltage - Rated:	65V
Package / Case:	NI-780S-4L2L
Supplier Device Package:	NI-780S-4L2L

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A2T26H160-24SR3 Application Field and Working Principle

A2T26H160-24SR3 is a RFMOS (Radio Frequency Enhancement Mode Metal Oxide Semiconductor) transistor, which is a type of field effect transistor (FET).FETs are typically used for switching and amplifying electronic signals in various electronic circuits. In comparison to conventional semiconductor bipolar transistors, FETs require less current to operate and they have higher input impedances.A2T26H160-24SR3 is an enhancement mode RF MOSFET, which operates in the frequency range of 100 - 1800 MHz. This device is commonly used in high power Radio Frequency (RF) applications.A2T26H160-24SR3 is an integrated circuit (IC) device. It consists of two identical MOSFET transistors in a sing-mold package. The package has an anode and a cathode, and two source terminals. The source terminals provide control of the MOSFET’s operation; the gate voltage connection is used to turn the device on and off.When the voltage on the gate is below the threshold voltage (V GT ), the device is off, and no current can be drawn from the drain lead. When the gate voltage is increased above V GT , the device turns on, and current can be drawn from the drain lead. This is known as the enhancement mode of operation.A2T26H160-24SR3 can operate in an environment containing high temperatures (up to 175°C), and high altitudes. It is suitable for general-purpose RF power amplifiers and RF switch applications.The main advantage of using A2T26H160-24SR3 is that it offers good signal-to-noise ratio (SNR) and low signal distortion, due to its low frequency response, high input impedance, and low gate-to-drain capacitance.In summary, A2T26H160-24SR3 is a type of enhancement mode RF MOSFET which is used in high power Radio Frequency applications. It is suitable for general-purpose RF power amplifiers and RF switch applications, and it offers good signal-to-noise ratio and low signal distortion. This device operates in an environment containing high temperatures, and high altitudes.

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