A2T21H140-24SR3

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A2T21H140-24SR3 is a low noise, high performance amplifier for ultra-broadband radio frequency (RF) applications across diverse industries. It is a field-effect transistor (FET) specifically designed for use in RF applications operating from 1 to 40GHz frequency ranges. It is a common choice for RF amplifiers due to its low-noise figure and high linearity, making it suitable for applications such as point-to-point radios, EMC/EMI testing, software-defined radios, automotive radar, satellite communications, and other applications where noise and linearity are critical.

The A2T21H140-24SR3 is built on a 0.25 micron CMOS process and features an FET gate with an on-chip block capacitor and an integrated ESD protection circuit. The on-chip capacitor allows for control of the transistor’s cutoff voltage and frequency of operation, while the ESD protection circuit minimizes the risk of damage from electrostatic discharge. The FET also offers low power consumption and a low voltage operation, making it suitable for use in a wide range of applications. It comes in a hermetic, industry-standard 4-pin package and is lead-free and RoHS compliant.

The working principle of the A2T21H140-24SR3 is rather simple. It consists of two terminals, the source (S) and the gate (G). When a voltage differential is applied between the source and the gate, it makes the transistor conduct in a pinch-off region known as the "channel." This channel then allows current to flow through the transistor. By controlling the voltage differential between the source and the gate, the current that flows through the channel can be accurately controlled. This current can then be used to amplify a signal, making the FET suitable for use in RF amplifiers.

The A2T21H140-24SR3 is a versatile device, offering a wide range of applications. Its low noise, high linearity, and wide dynamic range make it ideal for use in RF amplifiers and a variety of other RF applications. It is also a cost-effective solution due to its low power consumption and small package size. Additionally, its robust on-chip protection and wide temperature range make it suitable for a wide range of environments. The A2T21H140-24SR3 is an excellent choice for any application that requires a low-noise, high-linearity FET solution.

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