A2T21S161W12SR3 Allicdata Electronics
Allicdata Part #:

A2T21S161W12SR3-ND

Manufacturer Part#:

A2T21S161W12SR3

Price: $ 39.57
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: AIRFAST RF POWER LDMOS TRANSISTO
More Detail: RF Mosfet LDMOS 2.11GHz ~ 2.2GHz 38W NI-780-2S2...
DataSheet: A2T21S161W12SR3 datasheetA2T21S161W12SR3 Datasheet/PDF
Quantity: 1000
250 +: $ 35.97100
Stock 1000Can Ship Immediately
$ 39.57
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.11GHz ~ 2.2GHz
Gain: --
Current Rating: --
Noise Figure: --
Power - Output: 38W
Voltage - Rated: 28V
Package / Case: NI-780-2S2L
Supplier Device Package: NI-780-2S2L
Description

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A2T21S161W12SR3 is one of the most popular transistors in the market, as it is capable of addressing different applications related to RF (Radio Frequency).

The working principle behind the A2T21S161W12SR3 transistor can be best understood by its implementation in communication systems. This type of transistor is used as an amplifier in order to transmit and receive signals in the Radio Frequency spectrum. The incoming signal will be amplified by this transistor, allowing it to reach over a wider area of signal coverage, as it amplifies the signal to a usable range for receivers.

Not only does this transistor amplify signals but it also allows for signal frequency manipulation. Through the transistor’s various features, signal transmission can be enforced at the right frequency along with the right power. This helps ensure signal integrity and allows communication to occur over long distances.

The A2T21S161W12SR3 transistor is also suitable for usage in power amplification, as the device can be driven to produce a high-power transmit signal. Its ability to amplify signals at a high frequency makes it perfect for applications where power or consumer electronics products need a lot of extra mobility.

Its usage is also prevalent in industrial and automotive settings, where the transistor can be used for audio signal transmission and controls. It offers an economical and reliable solution for processing these signals and allows for greater communication between the consumer and the device.

The A2T21S161W12SR3 transistor is a major improvement to the MOSFET field-effect transistors, as it has better gain and power handling capabilities than most other transistor types. Its numerous features and capabilities allow the device to be used in extremely versatile settings and makes it suitable for different types of applications. Its common usage in communication, power and audio settings is a testament to its versatile usage in the modern era.

In conclusion, the A2T21S161W12SR3 transistor is a powerful solution for RF applications, with its ability to efficiently and securely amplify signals over long distances. Its distinct advantages over other transistor types, such as its high-powered operation and greater gain, is what makes it such a sought-after product. Indeed, the implementation of this device ensures a secure and reliable connection for a variety of power and communication systems.

The specific data is subject to PDF, and the above content is for reference

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