A2T27S007NT1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The A2T27S007NT1 is a silicon N-channel Field Effect Transistor (FET) optimized for use in radio frequency (RF) applications. It is designed to be used in a variety of power amplifiers, oscillators, communication and control circuits, RF switching circuits and other RF active device applications. The transistor is housed in a which is an ultra-small hermetic package that allows for a low profile, making it ideal for use in densely populated circuits or high-density system designs.

The A2T27S007NT1 is a depletion-mode transistor that has a maximum drain-source breakdown voltage (V_DS) rating of 27V. It has an enhanced RF performance at low current drain, with a maximum continuous drain current of 3.2A and a maximum drain-source voltage of 10V at 10MHz. The A2T27S007NT1 has an excellent maximum frequency range, up to 175MHz, and a high gain bandwidth of 35MHz. It is ideal for applications where high-frequency operation and switching speed are essential.

In operation, a drain-source voltage (V_DS) is applied across the source, which creates an electric field in the channel. The electric field is produced by the majority carriers, in this case electrons, which are attracted by the negative terminal of the applied voltage. The electric field modifies the distribution of the electrons and holes, allowing for more charge carriers in the device, thereby increasing the current flowing through the device. The A2T27S007NT1 has a high breakdown voltage, which enables it to handle more current without breaking down. The device also has a low gate threshold voltage, allowing for a low voltage to be applied to the gate terminal to control the current flowing through the device.

The A2T27S007NT1 can be used in many RF applications, such as power amplifiers, oscillators, communication and control circuits, RF switching circuits and other RF active device applications. It is well suited for cellular phones, ZigBee transmitters, wired and wireless communications systems, navigation systems and other RF applications that require a high-power, high-frequency and low-noise performance. The device is also suitable for use in automotive applications due to its hermetic package, which is designed to withstand harsh automotive environments.

In summary, the A2T27S007NT1 is designed for use in a variety of RF applications. It has a high drain-source breakdown voltage rating of 27V, a low gate-source voltage rating of 5V, and a high-frequency range of 175MHz. It is housed in a hermetic package for use in harsh automotive environments and is an excellent choice for power amplifiers, oscillators, communication and control circuits, RF switching circuits and other RF active device applications.

The specific data is subject to PDF, and the above content is for reference