AFV10700GSR5

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The AFV10700GSR5 is a high-performance, integrated RF N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device, which is used in a wide range of RF devices. This type of transistor is particularly useful for amplifiers, low-noise amplifiers (LNAs) and power amplifiers (PAs).

The AFV10700GSR5 is designed for applications that require exceptional frequency response, high linearity and high efficiency with low power consumption. The device is ideal for use in frequency bands from 700 MHz to 5 GHz, and is highly integrated, offering a great range of features including a wide range of matching networks, matched load and drain capacitances, a low on-resistance and low input/output return losses.

The AFV10700GSR5 has a very low input/output return losses which allow it to be used in high-gain, low-noise and low-power applications, making it ideal for use in RF and wireless applications such as point-to-point radios, WCDMA, WiMAX and LTE base stations, small cell networks and wireless infrastructure. The device is particularly suitable for use in applications requiring improved range, increased data throughput or increased efficiency.

This MOSFET device features a low gate threshold voltage and high transconductance, enabling it to provide high linearity and efficiency at low supply voltages. The device also features a wide range of gate bias, which supports a wide range of bias currents and gate-source voltages, allowing for flexible and efficient operation across the entire power consumption range.

The AFV10700GSR5 also features a high-performance Gate Induced Drain Leakage (GIDL) mitigation technology, which helps reduce power consumption and improve efficiency at higher frequencies. This technology is optimized for low-noise and high linearity applications.

The AFV10700GSR5 is a high-performance, integrated RF N-channel MOSFET device, which offers high linearity and efficiency with low power consumption. It is ideal for use in frequency bands from 700 MHz to 5 GHz and features a wide range of features including a wide range of matching networks, matched load and drain capacitances, a low on-resistance and low input/output return losses. It is suitable for use in high-gain, low-noise and low-power applications, making it ideal for use in RF and wireless applications such as point-to-point radios, WCDMA, WiMAX and LTE base stations, small cell networks and wireless infrastructure.

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