Allicdata Part #: | AFV121KHR5-ND |
Manufacturer Part#: |
AFV121KHR5 |
Price: | $ 366.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | IC TRANS RF LDMOS |
More Detail: | RF Mosfet LDMOS (Dual) 50V 100mA 960MHz ~ 1.22GHz ... |
DataSheet: | AFV121KHR5 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 333.44300 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 960MHz ~ 1.22GHz |
Gain: | 19.6dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 1000W |
Voltage - Rated: | 112V |
Package / Case: | SOT-979A |
Supplier Device Package: | NI-1230-4H |
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The AFV121KHR5 is an RF power MOSFET that demonstrates excellent performance over a wide range of conditions and applications. The device is designed for a broad range of applications such as linear amplifiers, switching circuits, and radio frequency (RF) communications equipment.
The AFV121KHR5 is a wide-band RF power MOSFET that features a 50-volt drain-source voltage and 45 watts of total drain power. A wide operating temperature range allows the device to be used in a variety of environments and conditions. It is fabricated using a high-voltage silicon-on-insulator (SOI) process and is packaged in an 8-lead plastic DIP package.
The device consists of a p-channel vertical DMOS transistor operating in common-source configuration. The device has an intrinsic gate capacitance of 5.3 pF and a drain-source capacitance of 40 pF. This makes it ideal for applications such as amplifiers, transmission-lines, and high-frequency communications equipment.
The AFV121KHR5 operates with a frequency range of 1.8 - 2.5 GHz and has a wide range of gain and power capability. The device has an input impedance of 50 ohms, an operating temperature range of -55 to +85 degrees Celsius, and a maximum drain-source voltage of 150 V. It also features a low on-resistance of 1.7 ohms, a maximum gate-source voltage of 8.5 V, and a maximum gate-drain voltage of 10 V.
The AFV121KHR5 has a high power capability and can handle up to 45 W of drain power when used in applications such as linear amplifiers, switching circuits, and high-power RF communications equipment. The device also provides excellent gain performance over a wide range of conditions, including temperatures, bias points, and frequencies. The device also exhibits low distortion and low noise figures over a wide range of operating conditions.
The AFV121KHR5 can be used for many RF applications including radio broadcast, cellular base station, and wireless LAN. Additionally, the device can be used in applications such as linear amplifiers, RF switches, and RF filters where high-power and high performance are required. The AFV121KHR5 is easy to use and reliable, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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