AFV10700HR5 Allicdata Electronics
Allicdata Part #:

568-13435-ND

Manufacturer Part#:

AFV10700HR5

Price: $ 296.95
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: RF MOSFET LDMOS DL 50V NI-780-4
More Detail: RF Mosfet LDMOS (Dual) 50V 100mA 1.03GHz ~ 1.09GHz...
DataSheet: AFV10700HR5 datasheetAFV10700HR5 Datasheet/PDF
Quantity: 45
1 +: $ 269.96100
Stock 45Can Ship Immediately
$ 296.95
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: LDMOS (Dual)
Frequency: 1.03GHz ~ 1.09GHz
Gain: 19.2dB
Voltage - Test: 50V
Current Rating: 1µA
Noise Figure: --
Current - Test: 100mA
Power - Output: 770W
Voltage - Rated: 105V
Package / Case: NI-780-4
Supplier Device Package: NI-780-4
Description

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The AFV10700HR5 is a special type of Field Effect Transistor (FET) specifically designed to operate in Radio Frequency (RF). A FET is a type of transistor that works on the principle of a variable electric field within a channel of semi-conductive material. It is an active electronic device that can control a high power electric current or voltage with a small signal voltage.

The AFV10700HR5 FET is made up of a channels, a source, and a drain. The channels are the semi-conductive material within which the voltage varies with the application of a control voltage. The source and the drain are contacts that allow charges to enter or exit the channel. This allows the transistor to operate as an amplifier, allowing a small applied voltage to control a larger voltage.

The AFV10700HR5 FET has the following features which make it specifically designed for use in RF applications:

  • High frequency range – The FET can operate in the highly sought after frequency range from 890 MHz to 960 MHz, making it ideal for use in applications such as GSM, WCDMA, CDMA, and CDMA 2000.
  • Low power dissipation – The FET can operate at very low power with a power dissipation of 5 W.
  • High power – The FET can deliver up to 140 W of power which makes it suitable for many high power applications.
  • Enhanced immunity – The FET has excellent immunity to Electro-Magnetic Interference (EMI) which is essential for reliable operation in an environment where there is a high level of EMI.

The AFV10700HR5 FET is commonly used in a variety of RF applications including antenna tuning, switching and amplification, as well as automotive, industrial and military applications. The FET can also be used as an RF amplifier as it can provide high gain and easily be tuned to the required frequency.

In summary, the AFV10700HR5 is a high performance FET specifically designed for RF applications that can operate in the highly sought after 890 MHz to 960 MHz frequency range. It has excellent immunity to EMI and can deliver up to 140 W of power. The FET is commonly used in antenna tuning, switching, and amplification, as well as automotive, industrial and military applications.

The specific data is subject to PDF, and the above content is for reference

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