AFV10700HSR5 Discrete Semiconductor Products

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The AFV10700HSR5 is a silicon N- Channel RF RF power Field Effect Transistor (FET) designed specifically as a driver device in applications up to 5 watts. The AFV10700HSR5 provides excellent RF performance with very low gains and high linearity. The integrated Heat Sink and High-Gain Package (HSR5) allows the FET to be mounted in tight spaces. This FET is ideal for use in a wide variety of amplifier and variable attenuator applications.

The AFV10700HSR5 device is suitable for most linear applications over the frequency range of 0.5-4GHz. It has an advanced transistor architecture, which helps to achieve low distortion, improved efficiency, and higher gain. The HSR5 also provides good linearity and power output in applications where size and mounting restraints are of critical importance.

The AFV10700HSR5 FET works on three basic principles. First, when voltage is applied to the FET gate, the transistor conducts current, amplifying the little current that is supplied to the gate. Second, the FET gate voltage changes with gate current, resulting in modulation of the gate voltage. Finally, the FET gate-drain capacitance boosts the gate current, giving the FET an instantaneous response to changes in gate voltage.

The AFV10700HSR5 has a low pinch-off voltage, which helps to reduce distortion. The device also has a low Thermal Resistance- Junction to Case, enabling superior thermal dissipation in high-power amplifier applications. The small package size also helps to keep circuit size and cost down, in applications where space or cost is of critical importance.

The AFV10700HSR5 is designed for use as a driver device in class AB amplifiers, RF attenuators, and radio frequency circuits. It is also suitable for use as a buffer stage in high-speed digital pulse amplifiers for telecommunications applications. In class AB amplifiers, the FET is mounted on a heat sink to ensure maximum power dissipation and performance. In RF attenuator applications, the FET is used to control the overall linearity and output power of the circuit. The FET can also be used as an output stage in high-speed digital pulse amplifiers, to drive the RF output at a high speed.

The AFV10700HSR5 can be used in a wide range of applications, from very low power radio frequency circuits, to high-powered class AB amplifiers for mobile radio systems. It is an excellent choice for applications where an efficiency improvement of up to 5 dB is needed. Its small size and high linearity make it an ideal candidate for power-sensitive applications. With its improved thermal resistance, it is an excellent choice for high-power amplifier applications. The FET is also ideal for use in a wide variety of amplifier and attenuator designs, with its linearity and modulation capabilities.

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