AFV141KGSR5 Allicdata Electronics
Allicdata Part #:

AFV141KGSR5-ND

Manufacturer Part#:

AFV141KGSR5

Price: $ 354.80
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: IC TRANS RF LDMOS
More Detail: RF Mosfet LDMOS (Dual) 50V 100mA 1.4GHz 17.7dB 100...
DataSheet: AFV141KGSR5 datasheetAFV141KGSR5 Datasheet/PDF
Quantity: 1000
50 +: $ 322.54800
Stock 1000Can Ship Immediately
$ 354.8
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual)
Frequency: 1.4GHz
Gain: 17.7dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 100mA
Power - Output: 1000W
Voltage - Rated: 105V
Package / Case: NI-1230-4S GW
Supplier Device Package: NI-1230-4S Gull Wing
Description

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The AFV141KGSR5 is an RF field effect transistor (FET) designed for use in various applications. It is a GaAs heterojunction FET, meaning that it contains a variety of materials, including aluminum and gallium arsenide, which are used to form a junction between two different materials, allowing for greater control over the electric fields and current flow. The device has a package size of 4.00mm x 7.00mm and is rated at 1 GHz with a power gain of 16 dB. It is a high-efficiency, high-power device that can operate in more extreme temperature ranges and has improved RF performance characteristics.

The AFV141KGSR5 is primarily used in radio frequency (RF) applications such as mobile communication systems, satellite communications, and wireless broadcast. It can be used as an amplifier, oscillator, receiver, or transmitter depending on the desired application. It can also be used for high speed switching and filtering, as well as to modulate the output of a signal. Additionally, the device can be used in various RF test and measurement equipment, such as network analyzers, spectrum analyzers, and signal generators.

The AFV141KGSR5’s working principle is based on majority carrier injection. This is a type of semiconductor device used for amplifying or controlling a small signal by allowing current to flow through it when it is switched on. The device has an input structure that consists of a source and a gate, which are connected to a central body containing an emitter, which is responsible for injecting carriers (electrons and holes) into the channel. These carriers then pass through the channel and when they reach the drain they are collected, allowing current to flow from the source to the drain. This type of transistor is known as an p-type field effect transistor, or PFET.

The AFV141KGSR5 is a versatile device, capable of being used for a variety of applications. It is reliable, efficient, and offers superior performance in terms of power output and signal transmission. Additionally, it has a robust design, making it suitable for a wide range of environmental conditions. As such, it is an ideal choice for a variety of RF applications.

The specific data is subject to PDF, and the above content is for reference

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