AFV141KHR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	1.4GHz
Gain:	17.7dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	1000W
Voltage - Rated:	105V
Package / Case:	SOT-979A
Supplier Device Package:	NI-1230-4H

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Introduction

The AFV141KHR5 is a research grade high-frequency, high gain RF n-channel MOSFET, designed to be used in a variety of applications. This particular model operates in frequencies ranging from 20-4000 MHz with a maximum input power of 10 watts. Along with its high frequency range, it also boasts a high-speed switching time of 40-60 nanoseconds and an impressive pulse repetition frequency. It is suitable for applications such as high frequency amplifiers, switch modulators, and circuits for communication systems.

Application Field

The AFV141KHR5\'s wide frequency range makes it fluid and efficient for a great variety of uses. As stated above, it is often used for high frequency amplifiers, switch modulators, and circuits for communication systems due to its great pulse repetition frequency. Using an RF process, the AFV141KHR5 can serve in switching mechanisms for long range, high speed communication and for remote control systems.The RF (Radio Frequency) technology of the AFV141KHR5 is of particular importance. The acronym RF refers to a branch of electromagnetism which uses radio waves to transfer information. These waves are commonly used in communication systems, digital TV, and wireless connection systems, such as Bluetooth and Wi-Fi. Since it is a research grade model, the AFV141KHR5 can be used in these systems to increase speeds, range, and efficiency significantly more than standard components.Due to its high gain, low noise characteristics, the AFV141KHR5 is often used in high powered amplifiers. Applications such as car audio and home theater amplifiers are a perfect fit for the AFV141KHR5 due to its wide frequency range and high gain characteristics.

Working Principle

The AFV141KHR5 works by employing an n-type MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) architecture which enables it to selectively amplify or route fixed signals or gain a wide range of signals. An n-type MOSFET is made up of a substrate of silicon doped with "free" electrons. These "free" electrons allow the transistor to complete a number of operations.The substrate of the AFV141KHR5 is composed of 4 layers of single-crystal silicon – two layers are n-doped while the other two are p-doped. The electrons of the n-doped layers provide a path between the source and drain of the MOSFET. This path is selectively opened and closed by the voltage applied to the gate. The more voltage applied to the gate, the more current can flow through the transistor, thus amplifying the signal output. This is the basic principle that supports the functionality of the AFV141KHR5.

Conclusion

The AFV141KHR5 is an impressive research grade high-frequency, high gain RF n-channel MOSFET. With a wide frequency range, a high-speed switching time, and a high pulse repetition frequency, the AFV141KHR5 is well-suited for many applications. It can be used for communication systems, long range high speed communication, remote control systems, high powered amplifiers, and car audio and home theater amplifiers. The AFV141KHR5 works by employing an n-type MOSFET architecture that allows it to selectively amplify or route fixed signals or gain a wide range of signals. This RF-based model brings tremendous performance enhancements to the table, offering great potential for applications.

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