ALD110802PCL Allicdata Electronics
Allicdata Part #:

1014-1020-ND

Manufacturer Part#:

ALD110802PCL

Price: $ 3.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Advanced Linear Devices Inc.
Short Description: MOSFET 4N-CH 10.6V 16DIP
More Detail: Mosfet Array 4 N-Channel, Matched Pair 10.6V 500m...
DataSheet: ALD110802PCL datasheetALD110802PCL Datasheet/PDF
Quantity: 24
1 +: $ 2.74050
10 +: $ 2.44503
100 +: $ 2.00504
500 +: $ 1.62361
1000 +: $ 1.36931
Stock 24Can Ship Immediately
$ 3.02
Specifications
Series: EPAD®
Packaging: Tube 
Part Status: Active
FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP
Description

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The Ald 110802PCL is a power field effect transistor (FET) array, which consists of four N-Channel enhancement-mode vertical DMOS FETs in a single package. It was designed to provide a low cost, easy to use solution for various power management applications. The Ald 110802PCL is ideal for use as a power switch, voltage amplifier, or voltage regulator in applications such as lighting, HVAC, home appliances, or battery powered devices.

This power FET array features a low on-state resistance, improved switching speed, and efficient current handling capabilities, with a maximum continuous drain current of 4 A. Its P-channel FETs feature an impressive maximum on-state resistance of 0.033 ohm, while its N-channel FETs feature a maximum on-state resistance of 0.018 ohm. Furthermore, it has an operating voltage of up to 55 V and an avalanche energy rating of 6 mJ.

Aside from its current and voltage handling capabilities, a major benefit of the Ald 110802PCL power FET array is its simple circuit design. It requires minimal external components for circuit configuration, thus reducing design time and ensuring better efficiency. It is available in the popular SOIC-8 package, for easy implementation and improved temperature stability. The dynamic internal resistance is also adjustable, making it ideal for use in high-efficiency, high reliability applications.

The working principle of the Ald 110802PCL is based on the standard MOSFET technology. In this configuration, the source and gate terminals are connected to the same voltage, and the N-Channel (or P-Channel) FETs act as switches, allowing current to flow between the drain and source terminals when the gate voltage is raised above the source voltage. The FETs are arranged in a parallel configuration, which enables low on-state resistance, improved switching speed, and improved current handling capabilities.

The Ald 110802PCL is an ideal solution for various power management applications. In its basic configuration, it can be used as a power switch, voltage amplifier, or voltage regulator. It also provides efficient current handling capabilities, adjustable dynamic internal resistance, and a simple circuit design, making it perfect for use in high-efficiency, high-reliability power management applications.

The specific data is subject to PDF, and the above content is for reference

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