Allicdata Part #: | 1014-1026-ND |
Manufacturer Part#: |
ALD110808PCL |
Price: | $ 2.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10.6V 16DIP |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA,... |
DataSheet: | ALD110808PCL Datasheet/PDF |
Quantity: | 997 |
50 +: | $ 2.02142 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 12mA, 3mA |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 4.8V |
Vgs(th) (Max) @ Id: | 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 16-DIP (0.300", 7.62mm) |
Supplier Device Package: | 16-PDIP |
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The ALD110808PCL is a multi-functional array type field-effect transistor (FET). It is constructed with an array of 8 independent FETs integrated into a single package, giving it a very diverse range of applications. The ALD110808PCL has a wide range of working voltages, low power and excellent signal-to-noise ratios. In addition, the package has a wide range of features built into it such as thermal protection, over-voltage protection, ESD protection and surge protection.
The ALD110808PCL is used in a wide range of applications, from signal switching in automotive systems to signal processing in audio/video equipment. It gives a robust signal level and reduces signal distortion, making it ideal for use in these applications. In automotive applications, the device is used for secure data transmission and provides high switching performance and high current levels, making it suitable for the high-end applications such as engine control and anti-theft systems. In audio/video equipment, it is used for signal buffering and high-resolution signal processing.
The working principle of the ALD110808PCL is based on the physics of a field-effect transistor. A field-effect transistor relies on the effects of an electric field on a semiconductor material. When an electric field passes through the transistor, it creates a depletion region which, in turn, affects the conductivity of the transistor. The transistors in an array are connected in parallel and each one can be used as an individual amplifier for applications where a higher gain is desired.
The ALD110808PCL has a wide range of advantages. It has low power consumption, low noise, and is highly temperature stable. In addition, it is resistant to EMI, making it suitable for use in a variety of environments. Furthermore, it is made up of a single package, which reduces the overall size and cost of the device. Moreover, its low power consumption helps to increase the battery life in portable applications.
In conclusion, the ALD110808PCL is a versatile array type FET with a wide range of applications. It has a wide range of working voltages, low power and excellent signal-to-noise ratios. Additionally, it is suitable for use in a variety of environments, thanks to its resistance to EMI. Furthermore, its single package helps to reduce the size and cost of the device. Finally, its low power consumption makes it an ideal choice for portable applications.
The specific data is subject to PDF, and the above content is for reference
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