ALD110914PAL Allicdata Electronics
Allicdata Part #:

1014-1042-ND

Manufacturer Part#:

ALD110914PAL

Price: $ 1.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Advanced Linear Devices Inc.
Short Description: MOSFET 2N-CH 10.6V 8DIP
More Detail: Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V...
DataSheet: ALD110914PAL datasheetALD110914PAL Datasheet/PDF
Quantity: 1000
50 +: $ 1.79311
Stock 1000Can Ship Immediately
$ 1.98
Specifications
Series: EPAD®
Packaging: Tube 
Part Status: Active
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.4V
Vgs(th) (Max) @ Id: 1.42V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Description

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ALD110914PAL is an array of transistors known as Field Effect Transistors (FETs) that are commonly used in various electronic components and devices. This type of transistor is extremely popular because of its wide array of applications and its ability to be packaged together into a small and cost-efficient package. The ALD110914PAL is a relatively new model, and it has a variety of features that make it highly desirable.

As with all other types of FETs, the ALD110914PAL has a simple yet effective working principle. The working principle of a FET is based on the concept of voltage divider circuits. A voltage divider circuit allows a given input voltage to be applied across several components, with each component adding its own voltage contribution to the final output voltage. In the case of the ALD110914PAL, the transistor array consists of nine individual FETs, each responsible for contributing its own fraction of the total voltage applied.

The working principle of a FET also states that current can only flow in one direction through the transistor. This means that the FETs in the ALD110914PAL will act as a barrier between the input voltage and the output voltage. This feature provides a lot of flexibility in terms of using the transistor in various applications, such as amplifying a signal, providing high-level switching, hysteresis switching, and voltage regulation.

When it comes to the various applications of the ALD110914PAL, it is mainly used as a high-frequency electronic switch. This is because the transistor array can be easily switched between an on-state and an off-state with a very small voltage change. It also has a high input impedance, which makes it ideal for use in circuits where a high frequency signal needs to be amplified or switched.

The ALD110914PAL is also commonly used in applications that require low power consumption. This is because it has a low gate-leakage current, which means that it can be used to turn circuits on and off with minimal power consumption. On top of this, the transistor array also has a low forward voltage drop and a very high switching speed, making it a popular choice for low-power radio frequency (RF) circuits.

In summary, the ALD110914PAL is an array of FETs that has a lot of features that make it extremely desirable in terms of its application field and working principle. It has many uses, including as a high-frequency electronic switch, as a low-power RF amplifier, and as a voltage regulating device. Its small size and cost-efficiency also make it a great choice for a variety of electronic components and devices.

The specific data is subject to PDF, and the above content is for reference

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